T. A. Fjeldly

Modeling and Simulation Methodology for SOA-Aware Circuit Design in DC and Pulsed-Mode Operation of HV MOSFETs

T. Gneiting, S. Khandelwal, S. Sharma, 2013, IEEE Transactions on Electron Devices.

A Surface-Potential-Based Compact Model for Study of Non-Linearities in AlGaAs/GaAs HEMTs

S. Khandelwal, T. A. Fjeldly, T. Fjeldly, 2012, 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

A physics based compact model for drain current in AlGaN/GaN HEMT devices

Sourabh Khandelwal, T. A. Fjeldly, 2012, 2012 24th International Symposium on Power Semiconductor Devices and ICs.

Analytical modeling of surface-potential and drain current in AlGaAs/GaAs HEMT devices

F. M. Yigletu, S. Khandelwal, T. A. Fjeldly, 2012, 2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT).

Compact physical models for gate charge and gate capacitances of AlGaN/GaN HEMTs

B. Iniguez, F. M. Yigletu, S. Khandelwal, 2013, 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Assessment of NBTI in Presence of Self-Heating in High- $k$ SOI FinFETs

S. Khandelwal, T. A. Fjeldly, J. Sedlmeir, 2012, IEEE Electron Device Letters.

A new charge conserving capacitance model for GaAs MESFET's

T. A. Fjeldly, M. Nawaz, 1997 .

Analytical Modeling of the Subthreshold Electrostatics of Nanoscale GAA Square Gate MOSFETs

S. K. Vishvakarma, T. A. Fjeldly, 2010 .

Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices

S. Khandelwal, Y. S. Chauhan, T. A. Fjeldly, 2012, IEEE Transactions on Electron Devices.

Unified physical I-V model including self-heating effect for fully depleted SOI/MOSFET's

Yuhua Cheng, T. A. Fjeldly, 1996 .