S. Reggiani

TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions

A. Gnudi, S. Poli, D. Varghese, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

TCAD predictions of hot-electron injection in p-type LDMOS transistors

A. Gnudi, C. Fiegna, E. Sangiorgi, 2019, ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC).

Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors

C. Fiegna, E. Sangiorgi, S. Reggiani, 2020, 2020 IEEE International Reliability Physics Symposium (IRPS).

Characterization and Modeling of BTI in SiC MOSFETs

C. Fiegna, E. Sangiorgi, F. Crupi, 2019, ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC).