M. Chen

Si/SiGe HBT technology for low-cost monolithic microwave integrated circuits

L. Larson, J. Malinowski, M. Matloubian, 1996, 1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC.

Bandgap engineered InP-based power double heterojunction bipolar transistors

Takyiu Liu, Chanh Nguyen, M. Chen, 1997, Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials.

High performance microwave elements for SiGe MMICs

M. Matloubian, L. Larson, M. Case, 1995, Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.

Accelerated RF life Testing of Gan Hfets

M. Chen, M. Micovic, P. Hashimoto, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

AlInAs/GaInAs/InP double heterojunction bipolar transistor with a novel base-collector design for power applications

M. Chen, D. Rensch, D. Rensch, 1996, IEEE Electron Device Letters.

Normally-off gate-recessed AlGaN/GaN-on-Si hybrid MOS-HFET with Al2O3 gate dielectric

M. Chen, R. Chu, A. L. Corrion, 2011, 69th Device Research Conference.

A submicrometer 252 GHz f/sub T/ and 283 GHz f/sub MAX/ InP DHBT with reduced C/sub BC/ using selectively implanted buried subcollector (SIBS)

M. Sokolich, J.C. Li, C.H. Fields, 2005, IEEE Electron Device Letters.

Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200 °C

Rongming Chu, M. Chen, K. Boutros, 2012, 2012 24th International Symposium on Power Semiconductor Devices and ICs.