R. Fischer

发表

ADVANCED PWR'S AS PROPULSION PLANTS FOR NUCLEAR SHIPS INCLUDING HIGH POWER SYSTEMS.

H. J. Hedemann, M. Andler, R. Fischer, 1972 .

Current from the nuclear power plant ''Bruno Leuschner'' Greifswald

R. Fischer, A. Geisthardt, 1974 .

Microwave properties of self-aligned GaAs/AlGaAs heterojunction bipolar transistors on silicon substrates

H. Morkoc, R. Fischer, R. Fischer, 1986, IEEE Electron Device Letters.

Bias dependence of capacitances in modulation-doped FET's at 4 GHz

H. Morkoc, R. Fischer, D. Arnold, 1984, IEEE Electron Device Letters.

An emitter guard-ring structure for GaAs high-gain heterojunction bipolar transistors

H. Morkoc, R. Fischer, R. Fischer, 1985, IEEE Electron Device Letters.

Temperature dependence of current gain in AlGaAs/GaAs heterojunction bipolar transistors

Naresh Chand, Hadis Morkoç, R. Fischer, 1984 .

Instabilities in modulation doped field-effect transistors (MODFETs) at 77 K

Michael S. Shur, Hadis Morkoç, T. J. Drummond, 1983 .

Photoconductivity effects in extremely high mobility modulation‐doped (Al,Ga)As/GaAs heterostructures

Hadis Morkoç, Robert E. Thorne, A. Y. Cho, 1982 .

Normally‐on and normally‐off camel diode gate GaAs field effect transistors for large scale integration

Hadis Morkoç, Robert E. Thorne, T. J. Drummond, 1982 .

High performance inverted and large current double interface modulation‐doped field‐effect transistors with the bulk (Al,Ga)As replaced by superlattice at the inverted interface

Hadis Morkoç, W. T. Masselink, R. Fischer, 1984 .

Enhanced luminescence from AlGaAs/GaAs single quantum well structures through improved interfaces

Miles V. Klein, Hadis Morkoç, Yun-Chorng Chang, 1984 .

Characteristics of GaAs/AlGaAs MODFETs grown directly on

H. Morkoc, R. Fischer, W. Kopp, 1984, 1984 International Electron Devices Meeting.

Double heterojunction AlxGa1-xAs/GaAs bipolar transistors (DHBJT's) by MBE with a current gain of 1650

H. Morkoc, R. Fischer, O. Tejayadi, 1983, IEEE Electron Device Letters.

GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxy

Naresh Chand, Hadis Morkoç, R. Fischer, 1985 .

On the collapse of drain I-V characteristics in modulation-doped FET's at cryogenic temperatures

H. Morkoc, R. Fischer, D. Perrachione, 1984, IEEE Transactions on Electron Devices.

High-quality GaAs MESFET's grown on Silicon substrates by molecular-beam epitaxy

H. Morkoc, R. Fischer, W. Kopp, 1985, IEEE Electron Device Letters.

Low threshold laser operation at room temperature in GaAs/(Al,Ga)As structures grown directly on (100)Si

Hadis Morkoç, R. Fischer, W. Kopp, 1986 .

Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy

Miles V. Klein, Hadis Morkoç, J. H. Mazur, 1985 .

Resonant tunneling oscillations in a GaAs‐AlxGa1−xAs heterostructure at room temperature

Hadis Morkoç, R. Fischer, Paul D. Coleman, 1985 .

Microwave characterization of (Al,Ga)As/GaAs modulation-doped FET's: Bias dependence of small-signal parameters

H. Morkoc, W.F. Kopp, R. Fischer, 1984, IEEE Transactions on Electron Devices.

Monolithic integration of GaAs/AlGaAs modulation‐doped field‐effect transistors and N‐metal‐oxide‐semiconductor silicon circuits

Hadis Morkoç, J. Detry, R. Fischer, 1985 .

Cryogenic temperature performance of modulation-doped field-effect transistors

J. Laskar, Ilesanmi Adesida, Alfred Y. Cho, 1989 .

Material properties of high‐quality GaAs epitaxial layers grown on Si substrates

Hadis Morkoç, Hartmut Zabel, R. Fischer, 1986 .

Double heterojunction GaAs/AlxGa1−xAs bipolar transistors prepared by molecular beam epitaxy

Hadis Morkoç, R. Fischer, W. G. Lyons, 1983 .