Kentaro Nagamatsu

Comparison of the simulation and experiments of the nitride-based UV light emitting diodes

Motoaki Iwaya, Kazuyoshi Iida, Krishnan Balakrishnan, 2007, SPIE OPTO.

Increased pressure digital metalorganic vapor phase epitaxy system with high-speed switching valves for growing high-In-content GaInN

Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, 2010, OPTO.

Design and lasing characteristics of GaN vertical elongated cavity surface emitting lasers

Masao Kawaguchi, Takuma Katayama, Kazuhiko Yamanaka, 2014, Photonics West - Optoelectronic Materials and Devices.

Growth and conductivity control of high quality AlGaN and its application to high-performance ultraviolet laser diodes

Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, 2009, OPTO.

Design of AlN-subwavelength grating for deep ultraviolet wavelength reflector operating at 244 nm of wavelength

Masanobu Haraguchi, Yuusuke Takashima, Yoshiki Naoi, 2021, Other Conferences.

Effect of c‐plane sapphire misorientation on the growth of AlN by high‐temperature MOVPE

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2008 .

High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN

Kazuyoshi Iida, Motoaki Iwaya, Satoshi Kamiyama, 2008 .

Low-leakage-current enhancement-mode AlGaN/GaN heterostructure field-effect transistor using p-type gate contact

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2006 .