Jens Rip

(Invited) Selective Etch of Si and SiGe for Gate All-Around Device Architecture

Naoto Horiguchi, Liesbeth Witters, Aaron Thean, 2015 .

Roadblocks andCritical Aspects ofCleaning forSub-65nm Technologies

Harald Kraus, Kenichi Sano, Kurt Wostyn, 2006 .

Wet Selective SiGe Etch to Enable Ge Nanowire Formation

Farid Sebaai, L. Witters, Kurt Wostyn, 2016 .

Mechanisms for the trimethylaluminum reaction in aluminum oxide atomic layer deposition on sulfur passivated germanium

Geoffrey Pourtois, Matty Caymax, Annelies Delabie, 2011 .

S-passivation of the Ge gate stack: Tuning the gate stack properties by changing the atomic layer deposition oxidant precursor

Laura Nyns, Herbert Struyf, Guy Brammertz, 2011 .

Assessing stability of metal tellurides as alternative photomask materials for extreme ultraviolet lithography

Vicky Philipsen, Eric Hendrickx, Marc Heyns, 2019, Journal of Vacuum Science & Technology B.

Biocompatibility assessment of advanced wafer-level based chip encapsulation

Maaike Op de Beeck, Rita Vos, Eric Dy, 2010, 3rd Electronics System Integration Technology Conference ESTC.

Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates

Geoffrey Pourtois, Matthias Mueller, Burkhard Beckhoff, 2012 .

Thin epitaxial si films as a passivation method for Ge(100) : Influence of deposition temperature on ge surface segregation and the high-k/Ge interface quality

Paul Zimmerman, Ben Kaczer, Wilfried Vandervorst, 2006 .