P. D. Ye
发表
H. Wu,
P. D. Ye,
2015
.
Yi Xuan,
Ming-Fu Li,
P. D. Ye,
2012,
IEEE Transactions on Electron Devices.
M. A. Alam,
P. D. Ye,
S. H. Shin,
2016,
2016 IEEE International Electron Devices Meeting (IEDM).
P. D. Ye,
P. Ye,
2014
.
P. D. Ye,
P. Ye,
O. Koybasi,
2009,
2009 IEEE International Electron Devices Meeting (IEDM).
20–80nm Channel length InGaAs gate-all-around nanowire MOSFETs with EOT=1.2nm and lowest SS=63mV/dec
M. J. Manfra,
P. D. Ye,
M. Manfra,
2012,
2012 International Electron Devices Meeting.
P. D. Ye,
G. F. Jiao,
M. F. Li,
2011,
2011 International Electron Devices Meeting.
P. D. Ye,
P. Ye,
R. Gordon,
2011,
2011 International Electron Devices Meeting.
M. J. Manfra,
P. D. Ye,
M. Manfra,
2012,
2012 International Electron Devices Meeting.
P. D. Ye,
P. Ye,
J. Hwang,
2016,
2016 IEEE MTT-S International Microwave Symposium (IMS).
M. A. Wahab,
M. A. Alam,
P. D. Ye,
2013,
2013 IEEE International Electron Devices Meeting.
P. D. Ye,
P. Ye,
R. Gordon,
2013,
IEEE Electron Device Letters.
T. Shen,
P. D. Ye,
L. W. Engel,
2009,
0908.3822.
P. D. Ye,
Y. Sui,
M. Qi,
2008,
0802.4103.
P. D. Ye,
P. Ye,
Han Liu,
2011,
IEEE Electron Device Letters.