Danilo Crippa

Enhanced Equipment and New Processes As Enabler for Power Technologies on 300mm Substrates

Johannes Baumgartl, Manfred Engelhardt, Martin Kraft, 2015 .

SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor

Giuseppe Pistone, F. Portuese, Marco Mauceri, 2006 .

Thick Epitaxial Layers Growth by Chlorine Addition

Danilo Crippa, M. Camarda, Giuseppe Abbondanza, 2009 .

4H-SiC epitaxial layer growth by trichlorosilane (TCS)

Giuseppe Pistone, Lucia Calcagno, Marco Mauceri, 2008 .

Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process

Giuseppe Pistone, F. Portuese, Fabrizio Roccaforte, 2006 .

High growth rate process in a SiC horizontal CVD reactor using HCl

Giuseppe Pistone, F. Portuese, Fabrizio Roccaforte, 2006 .

Ultra Low Noise Epitaxial 4H-SiC X-Ray Detectors

S. Lavanga, Claudio Lanzieri, Giuseppe Bertuccio, 2009 .