Yoshio Itaya

发表

NRZ operation at 40 Gb/s of a compact module with an MQW electroabsorption modulator integrated DFB laser

Akihide Sano, Ken-ichi Sato, Mikio Yoneyama, 1996, Proceedings of European Conference on Optical Communication.

Highly reliable and low-cost plastic modules of spot size converter integrated laser diodes for access network systems

H. Toba, Toshikazu Hashimoto, Fumiaki Hanawa, 1997 .

Frequency-tuned simultaneous lasings of four-channel integrated multielectrode distributed feedback lasers

Hiroshi Yasaka, Mitsuo Fukuda, Yoshinori Nakano, 1988 .

Degradation behavior in InGaAs/GaAs strained-quantum well lasers

Mitsuo Fukuda, Yoshio Itaya, Tatsuya Takeshita, 1998 .

An integrated external cavity laser composed of a UV written grating in a silica waveguide and a spot-size converted laser diode on Si

T. Hashimoto, Jacques Albert, Yasufumi Yamada, 1996 .

Spot-size converted 1.3 µm laser with butt-jointed selectively grown vertically tapered waveguide

Hideki Fukano, Yuichi Tohmori, M. Fukuda, 1995 .

Integrated external cavity laser composed of spot-size converted LD and UV written grating in silica waveguide on Si

Jacques Albert, Toshikazu Hashimoto, Yasufumi Yamada, 1996 .

Laser diodes monolithically integrated with spot-size converters fabricated on 2 inch InP substrates

Kenji Kawano, Yoshio Noguchi, Yuichi Tohmori, 1995 .

High temperature operation with low-loss coupling to fibre for narrow-beam 1.3 μm lasers with butt-jointed selective grown spot-size converter

Y. Tohmori, Hiromi Oohashi, Yasumasa Suzaki, 1995 .

Low threshold current GaInAsP/InP DFB lasers

Y. Tohmori, Yoshio Itaya, G. Motosugi, 1987 .

High-coupling-efficiency laser diodes integrated with spot-size converters fabricated on 2 inch InP substrates

Kenji Kawano, Yoshio Noguchi, M. Wada, 1995 .

Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 µm

Shigehisa Arai, Shinya Katayama, Yasuharu Suematsu, 1979 .

MOVPE-grown 1.5 µm distributed feedback lasers on corrugated InP substrates

Masashi Nakao, Yoshio Itaya, Yoshihiro Imamura, 1987 .

Carrier Lifetime Measurement of GaInAsP/InP Double-Heterostructure Lasers

Kenichi Iga, Yasuharu Suematsu, Yoshio Itaya, 1977 .

Ga x In 1-x As y P 1-y /InP injection laser partially loaded with first-order distributed Bragg reflector

Katsuyuki Utaka, Shigehisa Arai, Yasuharu Suematsu, 1979 .

1.67 µm Ga0.47In0.53As/InP DH Lasers Double Cladded with InP by LPE Technique

Shigehisa Arai, Yasuharu Suematsu, Yoshio Itaya, 1979 .

GaxIn1-xAsyP1-y–InP Injection Laser Partially Loaded with Distributed Bragg Reflector

Shigehisa Arai, Yasuharu Suematsu, Hideo Kawanishi, 1978 .

1.3-/spl mu/m buried-heterostructure lasers using a CH/sub 4/ reactive-ion-etched mesa structure grown by metalorganic vapor phase epitaxy

Y. Kondo, Mitsuo Yamamoto, Hiromi Oohashi, 1996, Proceedings of 8th International Conference on Indium Phosphide and Related Materials.

New 1.6 ?m wavelength GaInAsP/InP buried heterostructure lasers

Masahiro Asada, Shigehisa Arai, T. Tanbun-Ek, 1980 .

Very high-speed light-source module up to 40 Gb/s containing an MQW electroabsorption modulator integrated with a DFB laser

Akihide Sano, Mikio Yoneyama, K. Sato, 1997 .

Tunable optical-wavelength conversion using a multielectrode distributed-feedback laser diode with a saturable absorber

Hiroshi Yasaka, Katsuaki Magari, Kunishige Oe, 1987 .