Marshall I. Nathan

发表

Direct measurement of the piezoelectric field and Fermi level pinning in [111]B grown InGaAs/GaAs heterostructures

Hongen Shen, Mitra Dutta, P. Paul Ruden, 1992, Other Conferences.

Schottky Barriers and Heterojunctions of III-V and II-VI Compound Semiconductors

Marshall I. Nathan, 1997 .

Hydrostatic pressure dependence of charge carrier transport in single-crystal rubrene devices

Michael E. Gershenson, P. Paul Ruden, C. Daniel Frisbie, 2005 .

GUNN EFFECT IN n‐TYPE InSb

S. Porowski, William Paul, Marshall I. Nathan, 1969 .

High-Energy Emission in GaAs Electroluminescent Diodes

Marshall I. Nathan, A. E. Michel, M. Nathan, 1966 .

Tunneling hot‐electron transfer amplifier: A hot‐electron GaAs device with current gain

Marshall I. Nathan, M. Nathan, David C. Thomas, 1985 .

Pressure Dependence of the Current-Voltage Characteristics of Esaki Diodes

Marshall I. Nathan, S. L. Miller, Arthur C. Smith, 1960 .

Effect of substrate surface treatment in molecular beam epitaxy on the vertical electronic transport through the film-substrate interface

Marshall I. Nathan, M. Nathan, Chin-An Chang, 1981 .

Persistent photoconductivity in AlGaAs/GaAs modulation doped layers and field effect transistors: a review

Marshall I. Nathan, M. Nathan, 1986 .

GaAs Injection Laser with Novel Mode Control and Switching Properties

John C. Marinace, Marshall I. Nathan, A. E. Michel, 1965 .

Stress Dependence of Photoluminescence in GaAs

R. N. Bhargava, Marshall I. Nathan, M. Nathan, 1967 .

Current Voltage Characteristics of Germanium Tunnel Diodes

Marshall I. Nathan, M. Nathan, 1962 .