Hongxing Jiang

发表

Subpicosecond Raman studies of nonequilibrium electron transport in an In0.4Ga0.6N epilayer grown on GaN

David K. Ferry, Kong-Thon Tsen, W. Liang, 2004, SPIE OPTO.

Optical excitation of Er centers in GaN epilayers grown by MOCVD

John M. Zavada, J. Y. Lin, Matthew Hawkins, 2016, SPIE OPTO.

Exciton-polariton propagation in AlGaN/GaN quantum-well waveguides probe by time-resolved photoluminescence

J. Y. Lin, Tom Oder, Jing Li, 2002, SPIE OPTO.

Polarization of III-nitride blue and ultraviolet light-emitting diodes

K. H. Kim, Hongxing Jiang, J. Shakya, 2005 .

A study of the Au/Ni ohmic contact on p-GaN

Hongxing Jiang, T. E. Haynes, Jingyu Lin, 2000 .

High mobility InN epilayers grown on AlN epilayer templates

Hongxing Jiang, Neelam Khan, A. Sedhain, 2008 .

Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction

Joan M. Redwing, Hongxing Jiang, Jingyu Lin, 2000 .

InGaN/GaN multiple quantum well concentrator solar cells

Jing Li, Rajendra Dahal, Hongxing Jiang, 2010 .

Hydrogen generation by solar water splitting using p-InGaN photoelectrochemical cells

Jing Li, Hongxing Jiang, B. N. Pantha, 2010 .

Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys

Neeraj Nepal, Mim Lal Nakarmi, Hongxing Jiang, 2009 .

Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys

K. B. Nam, Mim Lal Nakarmi, Hongxing Jiang, 2005 .

Effects of the Wave Function Localization in AlInGaN Quaternary Alloys

Su-Huai Wei, Jian-Bai Xia, Hongxing Jiang, 2007 .

Growth of III-nitride photonic structures on large area silicon substrates

Hongxing Jiang, J. Lin, Hongxing Jiang, 2006 .

Comparison of optical transitions in InGaN quantum well structures and microdisks

Hongxing Jiang, Lun Dai, J. Lin, 2001 .

Growth and photoluminescence studies of Zn-doped AlN epilayers

Neeraj Nepal, Mim Lal Nakarmi, Hongxing Jiang, 2006 .

Temperature and compositional dependence of the energy band gap of AlGaN alloys

Jing Li, Neeraj Nepal, Mim Lal Nakarmi, 2005 .

InGaN/GaN multiple quantum well solar cells with long operating wavelengths

Rajendra Dahal, Jing Li, Hongxing Jiang, 2009 .

Hexagonal boron nitride epitaxial layers as neutron detector materials

Rajendra Dahal, S. Majety, Jing Li, 2011 .

Dynamics of a band‐edge transition in GaN grown by molecular beam epitaxy

Hadis Morkoç, Guangde Chen, Andrei Botchkarev, 1995 .

The origin of deep-level impurity transitions in hexagonal boron nitride

Jing Li, Hongxing Jiang, Hongxing Jiang, 2015 .

Optical modes within III-nitride multiple quantum well microdisk cavities

K. C. Zeng, Bei-Wei Zhang, R. A. Mair, 1998 .

InGaN/GaN quantum well interconnected microdisk light emitting diodes

Jing Li, Hongxing Jiang, Jingyu Lin, 2000 .

Hexagonal boron nitride thin film thermal neutron detectors with high energy resolution of the reaction products

Jing Li, S. Majety, Hongxing Jiang, 2015 .

Size dependence of III-nitride microdisk light-emitting diode characteristics

Hongxing Jiang, J. Shakya, J. Lin, 2001 .

AlGaN and InAlGaN alloys : epitaxial growth optical and electrical properties, and applications

Hongxing Jiang, J. Lin, Hongxing Jiang, 2002 .

Time-resolved photoluminescence studies of InGaN epilayers

Guangde Chen, M. Asif Khan, Hongxing Jiang, 1996 .

Nature of deep center emissions in GaN

Jing Li, Hongxing Jiang, A. Sedhain, 2010 .

Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31

Chih-Chung Yang, Kung-Jen Ma, Shih-Wei Feng, 2003 .

Effects of persistent photoconductivity on the characteristic performance of an AlGaN/GaN heterostructure ultraviolet detector

Hongxing Jiang, M. Khan, J. Lin, 1998 .

Mg acceptor level in AlN probed by deep ultraviolet photoluminescence

Jing Li, K. B. Nam, Mim Lal Nakarmi, 2003 .

Mechanisms of band‐edge emission in Mg‐doped p‐type GaN

Hadis Morkoç, Guangde Chen, Andrei Botchkarev, 1996 .

Optical properties of GaN/AlGaN multiple quantum well microdisks

Hadis Morkoç, K. C. Zeng, Bei-Wei Zhang, 1997 .

Unique optical properties of AlGaN alloys and related ultraviolet emitters

K. B. Nam, Mim Lal Nakarmi, Hongxing Jiang, 2004 .

Optical and electrical properties of Mg-doped p-type AlxGa1−xN

Mim Lal Nakarmi, Tom Oder, Hongxing Jiang, 2002 .

Optical properties of AlN and GaN in elevated temperatures

K. B. Nam, Hongxing Jiang, J. Lin, 2004 .

Photoresponsivity of ultraviolet detectors based on InxAlyGa1−x−yN quaternary alloys

Tom Oder, Hongxing Jiang, J. Lin, 2000 .

Fabrication and characterization of solid-state thermal neutron detectors based on hexagonal boron nitride epilayers

Jing Li, S. Majety, Hongxing Jiang, 2014 .

III-nitride ultraviolet light-emitting diodes with delta doping

K. H. Kim, Hongxing Jiang, J. Lin, 2003 .

Photoluminescence studies of band‐edge transitions in GaN epitaxial layers grown by plasma‐assisted molecular beam epitaxy

Hadis Morkoç, Guangde Chen, Hongxing Jiang, 1996 .

Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures

Salah M. Bedair, Baxter Moody, K. B. Nam, 2002 .

Optical and electrical properties of Al-rich AlGaN alloys

K. B. Nam, Hongxing Jiang, Jingyu Lin, 2001 .

Two-dimensional electron gas in AlGaN/GaN heterostructures

Hongxing Jiang, M. Khan, J. Lin, 1997 .

III-nitride blue microdisplays

Jing Li, Hongxing Jiang, Hongxing Jiang, 2001 .

Exciton-phonon interaction in InGaN/GaN and GaN/AlGaN multiple quantum wells

Hadis Morkoç, Andrei Botchkarev, Hongxing Jiang, 1997 .