D. Becher

Transistor aging and reliability in 14nm tri-gate technology

M. Agostinelli, S. Natarajan, S. Ramey, 2015, 2015 IEEE International Reliability Physics Symposium.

Process Technology Variation

M. D. Giles, S. Mudanai, K. J. Kuhn, 2011, IEEE Transactions on Electron Devices.

High sigma measurement of random threshold voltage variation in 14nm Logic FinFET technology

S. Natarajan, M. D. Giles, S. Mudanai, 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

Predictive compact modeling of NQS effects and thermal noise in 90nm mixed-signal/RF CMOS technology

S. Mudanai, Wei-Kai Shih, P. Packan, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Direct ion-implanted 0.12 μm GaAs MESFET with f/sub t/ of 121 GHz and f/sub max/ of 160 GHz

D. Becher, M. Feng, D. Becher, 1999, IEEE Electron Device Letters.

A comparison of state-of-the-art NMOS and SiGe HBT devices for analog/mixed-signal/RF circuit applications

P. Packan, M. Hattendorf, I. Post, 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..

Low-cost 38 and 77 GHz CPW MMICs using ion-implanted GaAs MESFETs

Milton Feng, Shyh-Chiang Shen, JianJang Huang, 2000, 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017).

Low-K Interconnect Stack with Thick Metal 9 Redistribution Layer and Cu Die Bump for 45nm High Volume Manufacturing

D. Becher, T. Mule, P. Moon, 2008, 2008 International Interconnect Technology Conference.

Low-k interconnect stack with a novel self-aligned via patterning process for 32nm high volume manufacturing

Martin Weiss, P. Hentges, Saurabh Agrawal, 2009, 2009 IEEE International Interconnect Technology Conference.

Noise performance of 90 nm CMOS technology

Wei-Kai Shih, D. Becher, K. Kuhn, 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).