H. Lafontaine

发表

Fabrication of Si/Si1-xGex waveguide WDM components

Siegfried Janz, Dan-Xia Xu, J. Fraser, 1997, Photonics West.

Band-gap tuning of SiGe/Si multiple quantum wells for waveguides and photodetectors

Robin L. Williams, Geof C. Aers, D. C. Houghton, 1997, Photonics West.

Photodetectors for 1.3-μm and 1.55-μm wavelengths using SiGe undulating MQWs on SOI substrates

Siegfried Janz, Dan-Xia Xu, M. Pearson, 1999, Photonics West.

Characterization of Si1−xGex epilayers grown using a commercially available ultrahigh vacuum chemical vapor deposition reactor

Nelson L. Rowell, D. C. Houghton, H. Lafontaine, 1996 .

Hot carrier effects on the correlation resistance in Si/SiGe heterojunction bipolar transistors

J. Graffeuil, R. Plana, L. Bary, 2000, 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534).

Quantum‐well intermixing in Si1−xGex/Si strained‐layer heterostructures using ion implantation

D. Labrie, Richard D. Goldberg, Ian V. Mitchell, 1996 .

Transimpedance amplifier-based full low-frequency noise characterization setup for Si/SiGe HBTs

J. Graffeuil, Mattia Borgarino, Robert Plana, 2001 .

LASERS, OPTICS, AND OPTOELECTRONICS 1933 Temperature and polarization dependence of LiNbO3 quasiphase-matched wavelength converters

Martin Richardson, Robert E. Peale, Frank Fuchs, 1999 .

Strain-induced birefringence in Si1−xGex optical waveguides

Siegfried Janz, Paul E. Jessop, D. M. Bruce, 1998 .

Laser plasma X-ray lithography using novolak resists

Henri Pepin, Mohamed Chaker, J. F. Currie, 1990 .

On the effects of hot carriers on the RF characteristics of Si/SiGe heterojunction bipolar transistors

Mattia Borgarino, Robert Plana, T. Parra, 2000 .

Ultra low phase noise SiGe HBT. Application to a C band sapphire resonator oscillator

M. Chaubet, R. Plana, V. Giordano, 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

Photoluminescence study of initial interdiffusion of SiGe/Si quantum wells grown by ultrahigh vacuum‐chemical vapor deposition

G. C. Aers, Nelson L. Rowell, D. C. Houghton, 1996 .

Optical properties of pseudomorphic Si/sub 1-x/Ge/sub x/ for Si-based waveguides at the /spl lambda/=1300-nm and 1550-nm telecommunications wavelength bands

Andre Delage, Siegfried Janz, Dan-Xia Xu, 1998 .

Large Signal Modeling of High Efficiency SiGe HBTs for Power Amplifier Applications

H. Lafontaine, M. Doherty, A. Joseph, 2007, 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

Si/Si1−xGex photodetectors using three-dimensional growth modes to enhance photoresponse at λ=1550 nm

Siegfried Janz, Dan-Xia Xu, M. Pearson, 2000 .

Non-linear noise mechanisms in SiGe BiCMOS devices

R. Plana, L. Bary, E. Tournier, 2000, 2000 Topical Meetings on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. No.00EX397).