Kenji Shiojima

发表

Properties of Wide-Band-Gap Semiconductors for Electron Device Fabrication

Kenji Shiojima, 2002 .

Process Technique for GaN Related Electron Devices

Kenji Shiojima, 2002 .

Fabrication and evaluation of short-gate AlGaN/GaN HEMTs

Tetsuya Suemitsu, Naoteru Shigekawa, Kenji Shiojima, 2002 .

From the Editor‐in‐Chief

Hiroshi Toshiyoshi, Hiroshi Iwai, Atsushi Sanada, 2006 .

Electrical characteristics of n-GaN Schottky contacts on cleaved surfaces of free-standing substrates: Metal work function dependence of Schottky barrier height

Tomoyoshi Mishima, Kenji Shiojima, T. Mishima, 2017 .

High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates

Toshihiko Kosugi, Naoteru Shigekawa, Hiroyasu Ishikawa, 2004 .

Optical study of high-biased AlGaN/GaN high-electron-mobility transistors

Tetsuya Suemitsu, Naoteru Shigekawa, Kenji Shiojima, 2002 .

Intrinsic Transit Delay and Effective Electron Velocity of AlGaN/GaN High Electron Mobility Transistors

Tetsuya Suemitsu, Naoteru Shigekawa, Takashi Makimura, 2005 .

Device Temperature Measurement of Highly Biased AlGaN/GaN High-Electron-Mobility Transistors

Kiyomitsu Onodera, Naoteru Shigekawa, Kenji Shiojima, 2003 .

LASERS, OPTICS, AND OPTOELECTRONICS 1933 Temperature and polarization dependence of LiNbO3 quasiphase-matched wavelength converters

Martin Richardson, Robert E. Peale, Frank Fuchs, 1999 .

Optimum Rapid Thermal Activation of Mg-Doped p-Type GaN

Naoki Shibata, Masaaki Kuzuhara, Hiroshi Saito, 2008 .

Electroluminescence characterization of AlGaN/GaN high-electron-mobility transistors

Tetsuya Suemitsu, Naoteru Shigekawa, Kenji Shiojima, 2001 .

Correlation between current–voltage characteristics and dislocations for n-GaN Schottky contacts

Tetsuya Suemitsu, Kenji Shiojima, T. Suemitsu, 2001 .

Large Schottky barriers formed on epitaxial InGaP grown on GaAs

Fumiaki Hyuga, Kazumi Nishimura, Kenji Shiojima, 1995 .