Yi-Che Lee

(Invited) Development of III-Nitride Bipolar Transistor Switches and Rectifiers

Theeradetch Detchprohm, Shyh-Chiang Shen, Russell D. Dupuis, 2017 .

Failure analysis of a cold-extrusion punch to enhance its quality and prolong its life

Fuh-Kuo Chen, Yi-Che Lee, Yi-Che Lee, 2000 .

Temperature-Dependent Characteristics of GaN Homojunction Rectifiers

Theeradetch Detchprohm, Shyh-Chiang Shen, Russell D. Dupuis, 2015, IEEE Transactions on Electron Devices.

Surface Leakage in GaN/InGaN Double Heterojunction Bipolar Transistors

Shyh-Chiang Shen, Yi-Che Lee, Jae-Hyun Ryou, 2009, IEEE Electron Device Letters.

Fatigue life of cold-forging dies with various values of hardness

Fuh-Kuo Chen, Yi-Che Lee, Yi-Che Lee, 2001 .

GaN/InGaN avalanche phototransistors

Theeradetch Detchprohm, Shyh-Chiang Shen, Russell D. Dupuis, 2015 .

Yield criterion for a perforated sheet with a uniform triangular pattern of round holes and a low ligament ratio

Fuh-Kuo Chen, Yi-Che Lee, Yi-Che Lee, 2000 .

Bipolar III-N high-power electronic devices

Shyh-Chiang Shen, Russell D. Dupuis, Zachary Lochner, 2013, The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications.

GaN/InGaN heterojunction bipolar transistors with ultra‐high d.c. power density (>3 MW/cm2)

Shyh-Chiang Shen, Russell D. Dupuis, Zachary Lochner, 2012 .