Neerav Kharche

发表

Nanoelectronic Modeling using NEMO 3-D and OMEN and their Deployment on nanoHUB.org

Muhammad Usman, Gerhard Klimeck, Hoon Ryu, 2008 .

Multimillion Atom Simulations with Nemo3D

Gerhard Klimeck, Michael McLennan, Steven M. Clark, 2009, Encyclopedia of Complexity and Systems Science.

Electronic Structure of Si/InAs Composite Channels

Gerhard Klimeck, Marta Prada, Neerav Kharche, 2007 .

Nanoelectronic Modeling Lecture 41: Full-Band and Atomistic Simulation of Realistic 40nm InAs HEMT

Gerhard Klimeck, Mathieu Luisier, Neerav Kharche, 2010 .

Valley splitting in strained silicon quantum wells modeled with 2° miscuts, step disorder, and alloy disorder

Gerhard Klimeck, Marta Prada, Timothy B. Boykin, 2007 .

Approximate bandstructures of semiconductor alloys from tight-binding supercell calculations

Gerhard Klimeck, Timothy B. Boykin, Neerav Kharche, 2007, Journal of Physics: Condensed Matter.

Performance analysis of a Ge/Si core/shell nanowire field-effect transistor.

Gerhard Klimeck, Gengchiau Liang, Charles M Lieber, 2006, Nano letters.

Brillouin-zone Unfolding of Perfect Supercells Having Nonequivalent Primitive Cells Illustrated with a Si/Ge Tight-Binding parameterization

Gerhard Klimeck, Timothy B. Boykin, Neerav Kharche, 2007 .

A comparative study of quantum transport properties of silver and copper nanowires using first principles calculations

Neerav Kharche, R. Geer, S. Nayak, 2011, Journal of physics. Condensed matter : an Institute of Physics journal.

Electronic structure and transmission characteristics of SiGe nanowires

Gerhard Klimeck, Mathieu Luisier, Timothy B. Boykin, 2008 .

First-principles approach to calculating energy level alignment at aqueous semiconductor interfaces.

Neerav Kharche, M. Hybertsen, N. Kharche, 2014, Physical review letters.