H. Bernt

Fabrication of 0.5 µm MOS Test Devices by Application of X-ray Lithography at All Levels

Hans L. Huber, W. Windbracke, D. Friedrich, 1989, Advanced Lithography.

Fabrication of 0.5 μm n‐ and p‐type metal–oxide semiconductor test devices using x‐ray lithography

W. Windbracke, P. Lange, H. Bernt, 1989 .

Electrical and Structural Properties of Ultrathin SiO2 Gate Dielectrics Prepared Under Various Conditions

W. Windbracke, P. Lange, H. Bernt, 1992 .

Measurement of minority carrier lifetime profiles in silicon

H. Reichl, H. Bernt, H. Reichl, 1977 .

The inversion layer of subhalf-micrometer n- and p-channel MOSFET's in the temperature range 208-403 K

W. Windbracke, H. G. Wagemann, H. Bernt, 1993 .

A novel micromachining technology for structuring borosilicate glass substrates

H. Bernt, P. Merz, H.J. Quenzer, 2003, TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664).

In situ temperature and distribution measurements of x-ray

H. Bernt, J. Trube, H. L. Huber, 1992 .