Chin-Che Tin

发表

A Microcomputer-Controlled Temperature Controller

Chin-Che Tin, 1985 .

Electrical characteristics of bulk GaN-based Schottky rectifiers with ultrafast reverse recovery

Minseo Park, Chin-Che Tin, C. Tin, 2006 .

Investigation of 4H-SiC MOS capacitors annealed in diluted N2O at different temperatures

Rusli, Chin-Che Tin, J. Ahn, 2006 .

Kinetics of NO nitridation in SiO2/4H–SiC

Leonard C. Feldman, Robert A. Weller, Chin-Che Tin, 2003 .

The role of oxygen in electron cyclotron resonance etching of silicon carbide

Rusli, Chin-Che Tin, J. Ahn, 2006 .

Auger electron spectroscopy study of reactive ion etched silicon carbide

Rusli, Chin-Che Tin, J. Ahn, 2006 .

Temperature-dependent electrical characteristics of bulk GaN Schottky rectifier

Edward A. Preble, Minseo Park, Chin-Che Tin, 2007 .

Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide

Leonard C. Feldman, Robert A. Weller, Chin-Che Tin, 2002 .

Fowler–Nordheim hole tunneling in p-SiC/SiO2 structures

Leonard C. Feldman, M. Di Ventra, Robert A. Weller, 2000 .

Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H–SiC at the oxide/(112̄0) 4H–SiC interface

J. R. Williams, Leonard C. Feldman, Dmitri Starodub, 2004 .

Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation

Leonard C. Feldman, Chin-Che Tin, Sokrates T. Pantelides, 2001 .

Deep Level Transient Spectroscopy

Chin-Che Tin, 2012 .

Effects of anneals in ammonia on the interface trap density near the band edges in 4H–silicon carbide metal-oxide-semiconductor capacitors

Leonard C. Feldman, M. Di Ventra, Robert A. Weller, 2000 .

Interface state densities near the conduction band edge in N-type 4H- and 6H-SiC

J. R. Williams, Leonard C. Feldman, Robert A. Weller, 2000, 2000 IEEE Aerospace Conference. Proceedings (Cat. No.00TH8484).

Reduction of etch pits in heteroepitaxial growth of 3CSiC on silicon

Chin-Che Tin, R. Hu, C. Tin, 1995 .

Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate

Edward A. Preble, Jung-Hyun Park, Minseo Park, 2008 .

Improved performance of SiC MESFETs using double-recessed structure

Rusli, Chin-Che Tin, J. Ahn, 2006 .