S. C. Foo

Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation

Govindo J. Syaranamual, Chee Lip Gan, Riko I. Made, 2016, Microelectron. Reliab..

Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon

Gang Ye, Hong Wang, Yang Li, 2013 .

Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator

Zhen Liu, Geok Ing Ng, S. C. Foo, 2009 .

Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

S. C. Foo, G. Ng, Xing Zhou, 2015 .

Temperature-Dependent Microwave Noise Characteristics in ALD $\hbox{Al}_{2}\hbox{O}_{3}$/AlGaN/GaN MISHEMTs on Silicon Substrate

S. C. Foo, G. Ng, S. Arulkumaran, 2011, IEEE Electron Device Letters.

Enhanced DC and RF performance of AlGaN/GaN HEMTs on CVD-Diamond in high power CW operation

N. G. Ing, S. C. Foo, S. Arulkumaran, 2019, 2019 Electron Devices Technology and Manufacturing Conference (EDTM).

Improved Linearity for Low-Noise Applications in 0.25-$ \mu\hbox{m}$ GaN MISHEMTs Using ALD $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric

S. C. Foo, G. Ng, S. Arulkumaran, 2010, IEEE Electron Device Letters.

High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Insulator Grown by ALD

Geok Ing Ng, S. Arulkumaran, S. C. Foo, 2010, IEEE Electron Device Letters.

Record-low contact resistance for InAlN/AlN/GaN high electron mobility transistors on Si with non-gold metal

S. C. Foo, G. Ng, S. Tripathy, 2015 .