Kurt A. Moen

Establishing best-practice modeling approaches for understanding single-event transients in Gb/s SiGe digital logic

John D. Cressler, Kurt A. Moen, Stanley D. Phillips, 2011, 2011 12th European Conference on Radiation and Its Effects on Components and Systems.

An Investigation of Single Event Transient Response in 45-nm and 32-nm SOI RF-CMOS Devices and Circuits

John D. Cressler, Zachary E. Fleetwood, Nelson E. Lourenco, 2013, IEEE Transactions on Nuclear Science.

An Investigation of Single-Event Effects and Potential SEU Mitigation Strategies in Fourth-Generation, 90 nm SiGe BiCMOS

John D. Cressler, Jeffrey H. Warner, David Harame, 2013, IEEE Transactions on Nuclear Science.

Impact of body tie and Source/Drain contact spacing on the hot carrier reliability of 45-nm RF-CMOS

John D. Cressler, Ronald D. Schrimpf, Daniel M. Fleetwood, 2010, 2010 IEEE International Integrated Reliability Workshop Final Report.

Optimization of SiGe bandgap-based circuits for up to 300 °C operation

Laleh Najafizadeh, John D. Cressler, Nelson E. Lourenco, 2011 .

Performance and reliability of SiGe devices and circuits for high-temperature applications

Leora Peltz, Laleh Najafizadeh, John D. Cressler, 2009 .