T. Pompl

Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides

A. Kerber, M. Kerber, T. Pompl, 2006, Microelectron. Reliab..

The influence of p-polysilicon gate doping on the dielectric breakdown of PMOS devices

M. Kerber, T. Pompl, G. Innertsberger, 2001, Microelectron. Reliab..

Soft breakdown and hard breakdown in ultra-thin oxides

M. Kerber, C. Engel, H. Wurzer, 2001, Microelectron. Reliab..

Practical aspects of reliability analysis for IC designs

J. Schneider, H. Nielen, M. Hommel, 2006, 2006 43rd ACM/IEEE Design Automation Conference.

Influence of soft breakdown on NMOSFET device characteristics

I. Eisele, Martin Kerber, Helmut Wurzer, 1999, 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296).

Lifetime Prediction for CMOS Devices with Ultra Thin Gate Oxides Based on Progressive Breakdown

M. Kerber, A. Kerber, T. Pompl, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

65nm cmos technology for low power applications

M. Sherony, T. Schiml, A. Cowley, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

TDDB robustness of highly dense 65NM BEOL vertical natural capacitor with competitive area capacitance for RF and mixed-signal applications

J.B. Tan, A. von Glasow, T. Pompl, 2008, 2008 IEEE International Reliability Physics Symposium.

Contribution of interface traps to valence band electron tunneling in PMOS devices

M. Kerber, I. Eisele, H. Wurzer, 2000, 30th European Solid-State Device Research Conference.