Giuseppe Currò

发表

Experimental study of power MOSFET's gate damage in radiation environment

Francesco Iannuzzo, Giovanni Busatto, Alberto Porzio, 2006, Microelectron. Reliab..

Junction leakage current degradation under high temperature reverse-bias stress induced by band-defect-band tunnelling in power VDMOS

Giuseppe Currò, Giacomo Barletta, 2005, Microelectron. Reliab..

Carrier trapping in thin N2O-grown oxynitride/oxide di-layer for PowerMOSFET devices

Giuseppe Currò, Marco Camalleri, Denise Calì, 2007, Microelectron. Reliab..

Growth process and chemical characterization of an ultrathin phosphate film grafted onto Al-alloy metallization surfaces relevant to microelectronic devices reliability

Giuseppe Currò, Antonino Scandurra, R. Greco, 2002, Microelectron. Reliab..

Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions

Francesco Iannuzzo, Giovanni Busatto, Alberto Porzio, 2009, Microelectron. Reliab..

Evaluation of the generation mechanisms at surface and in the bulk of the silicon by current transient technique

Giuseppe Currò, Giacomo Barletta, 2007, Microelectron. Reliab..

Experimental evidence of "latent gate oxide damages" in medium voltage power MOSFET as a result of heavy ions exposure

Francesco Iannuzzo, Giovanni Busatto, Alberto Porzio, 2008, Microelectron. Reliab..

A new test methodology for an exhaustive study of single-event-effects on power MOSFETs

D. Bisello, Francesco Iannuzzo, Giovanni Busatto, 2011, Microelectron. Reliab..

Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET

Francesco Iannuzzo, Giovanni Busatto, Alberto Porzio, 2010, Microelectron. Reliab..

Nitrogen bonding configurations near the oxynitride/silicon interface after oxynitridation in N2O ambient of a thin SiO2 gate

Giuseppe Currò, Marco Camalleri, Denise Calì, 2007, Microelectron. Reliab..

Interface states and traps in thin N2O-grown oxynitride/oxide di-layer for PowerMOSFET devices

Giuseppe Currò, Marco Camalleri, Denise Calì, 2007, Microelectron. Reliab..

Experimental and Numerical investigation about SEB/SEGR of Power MOSFET

Francesco Iannuzzo, Giovanni Busatto, Alberto Porzio, 2005, Microelectron. Reliab..

The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure

Francesco Iannuzzo, Giovanni Busatto, Alberto Porzio, 2004, Microelectron. Reliab..

Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment

Francesco Iannuzzo, Giovanni Busatto, Annunziata Sanseverino, 2006 .

Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment

A. Candelori, Francesco Iannuzzo, Giovanni Busatto, 2003, Microelectron. Reliab..

Corrosion Inhibition of Al Metal in Microelectronic Devices Assembled in Plastic Packages

Giuseppe Currò, Ferruccio Frisina, Antonino Scandurra, 2001 .