M. Nagahara

An E-mode GaAs FET power amplifier MMIC for GSM phones

M. Suzuki, Y. Tateno, W. Kennan, 1997, 1997 IEEE MTT-S International Microwave Symposium Digest.

A high gain L-band GaAs FET technology for 28 V operation

H. Haematsu, J. Fukaya, S. Sano, 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).

Surface-charge controlled AlGaN/GaN-power HFET without current collapse and gm dispersion

N. Hara, Y. Tateno, K. Joshin, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

High-power and high-efficiency AlGaN/GaN HEMT operated at 50 V drain bias voltage

S. Yokokawa, Naoki Hara, Toshihide Kikkawa, 2003, IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2003.

Current path optimized structure for high drain current density and high gate-turn-on voltage enhancement mode heterostructure field effect transistors

Y. Nakasha, N. Hara, K. Joshin, 1998, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260).

A 36 W CW AlGaN/GaN-power HEMT using surface-charge-controlled structure

S. Yokokawa, N. Hara, Y. Tateno, 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

A low-distortion and high-efficiency E-mode GaAs power FET based on a new method to improve device linearity focused on g/sub m/ value

J. Fukaya, Y. Nakasha, Y. Tateno, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

Improved intermodulation distortion profile of AlGaN/GaN HEMT at high drain bias voltage

N. Hara, Y. Tateno, K. Joshin, 2002, Digest. International Electron Devices Meeting,.

A 28V 250W GaAs power FET with high gain of 15.5 dB for W-CDMA base stations

S. Sano, M. Nagahara, K. Inoue, 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).

A 100 W high-efficiency GaN HEMT amplifier for S-band wireless system

S. Sano, T. Yamamoto, M. Nagahara, 2005, European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005.