Hadis Morkoç

发表

Self-Assembled Guanosine-Based Nanoscale Molecular Photonic Devices

Jianyou Li, Hadis Morkoç, Arup Neogi, 2010 .

Reduction of efficiency droop in InGaN-based blue LEDs

Hadis Morkoç, Xianfeng Ni, Xiang Li, 2009, OPTO.

AlGaN/SiC heterojunction bipolar transistor

Hadis Morkoç, Ya. I. Alivov, Q. Fan, 2008, SPIE OPTO.

Estimation of carrier leakage in InGaN light emitting diodes from photocurrent measurements

Hadis Morkoç, Ümit Özgür, Shopan Hafiz, 2014, Photonics West - Optoelectronic Materials and Devices.

Point defect reduction in GaN layers grown with the aid of SiNx nanonet by metalorganic chemical vapor deposition

Hadis Morkoç, J. Xie, S. Chevtchenko, 2007, SPIE OPTO.

Optimization of ZnO:Ga properties for application as a transparent conducting oxide in InGaN-based light-emitting diodes

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2011, OPTO.

Strong exciton-photon coupling in hybrid InGaN-based microcavities on GaN substrates

Hadis Morkoç, Ümit Özgür, Fan Zhang, 2015, Photonics West - Optoelectronic Materials and Devices.

Enhancement of coherent acoustic phonons in InGaN multiple quantum wells

Hadis Morkoç, Ümit Özgür, Fan Zhang, 2015, Photonics West - Optoelectronic Materials and Devices.

Impact of extended defects on optical properties of (1-101)GaN grown on patterned Si

Sebastian Metzner, Hadis Morkoç, Ümit Özgür, 2014, Photonics West - Optoelectronic Materials and Devices.

Bulk ZnO: Current Status, Challenges, and Prospects

Hadis Morkoç, Vitaliy Avrutin, Gene Cantwell, 2010, Proceedings of the IEEE.

Pyramid nano-voids in GaN and InGaN

Hadis Morkoç, Ümit Özgür, V. Avrutin, 2012, OPTO.

Carrier relaxation and stimulated emission in ZnO nanorods grown by catalyst-assisted vapor transport on various substrates

Hadis Morkoç, Ümit Özgür, V. Avrutin, 2007, SPIE OPTO.

Determination of carrier diffusion length in p- and n-type GaN

Sebastian Metzner, Hadis Morkoç, Ümit Özgür, 2014, Photonics West - Optoelectronic Materials and Devices.

Investigation of charge trapping at the oxide/semiconductor interface for MBE-grown GaN films

Hadis Morkoç, J. Xie, M. A. Reshchikov, 2008, SPIE OPTO.

Exciton localization in (11-22)-oriented semi-polar InGaN multiple quantum wells

Hadis Morkoç, Ümit Özgür, Natalia Izyumskaya, 2016, SPIE OPTO.

Electrical defects in AlGaN and InAlN

Hadis Morkoç, J. Xie, Jacob H. Leach, 2009, OPTO.

Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes

Hadis Morkoç, Xianfeng Ni, Keith R. Evans, 2009, OPTO.

Low-frequency noise measurements of electrical stress in InAlN/GaN and AlGaN/GaN heterostructure field-effect transistors

Hadis Morkoç, Ümit Özgür, Xing Li, 2011, OPTO.

Wide Bandgap Semiconductor-Based Surface-Emitting Lasers: Recent Progress in GaN-Based Vertical Cavity Surface-Emitting Lasers and GaN-/ZnO-Based Polariton Lasers

Hadis Morkoç, Ryoko Shimada, 2010, Proceedings of the IEEE.

On carrier spillover in c- and m-plane InGaN light-emitting diodes

Hadis Morkoç, Xianfeng Ni, Keith R. Evans, 2010, OPTO.

Growth of Bulk GaN and AlN: Progress and Challenges

Yusuke Mori, Hadis Morkoç, Vitaliy Avrutin, 2010, Proceedings of the IEEE.

Principles and technology of MODFETs

Hadis Morkoç, Hilmi Ünlü, G. Ji, 1991 .

Quaternary BeMgZnO by plasma-enhanced molecular beam epitaxy for BeMgZnO/ZnO heterostructure devices

Hadis Morkoç, Ümit Özgür, David J. Smith, 2017, OPTO.

AlGaN/GaN MOS transistors using crystalline ZrO2 as gate dielectric

Hadis Morkoç, V. Avrutin, Natalia Izyumskaya, 2007, SPIE OPTO.

Active region dimensionality and quantum efficiencies of InGaN LEDs from temperature dependent photoluminescence transients

Hadis Morkoç, Ümit Özgür, Fan Zhang, 2015, Photonics West - Optoelectronic Materials and Devices.

AFM and CAFM studies of ELO GaN films

Hadis Morkoç, Xianfeng Ni, J. C. Moore, 2007, SPIE OPTO.

Effect of substrate offcut on AlGaN/GaN HFET structures on bulk GaN substrates

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2011, OPTO.

Nanoheteroepitaxy of GaN on columnar SiC substrates by metalorganic chemical vapor deposition

Necmi Biyikli, Hadis Morkoç, Ümit Özgür, 2007, SPIE OPTO.

Effect of ambient on electrical and optical properties of GaN

Hadis Morkoç, M. A. Reshchikov, A. A. Baski, 2009, OPTO.

Vertical composition variation in nominally uniform InGaN layers revealed by aberration-corrected STEM imaging

Hadis Morkoç, Ümit Özgür, V. Avrutin, 2011, OPTO.

Recombination dynamics in non-polar m-plane GaN investigated by time- and polarization-resolved photoluminescence

Hadis Morkoç, Ümit Özgür, Shopan Hafiz, 2013, Photonics West - Optoelectronic Materials and Devices.

Investigation of current-voltage characteristics of n-GaN/i-AlxGa1-xN/n-GaN structures

Hadis Morkoç, P. Paul Ruden, Xianfeng Ni, 2007, SPIE OPTO.

Growth and polarity control of GaN and AlN on carbon-face SiC by metalorganic vapor phase epitaxy

Hadis Morkoç, Ümit Özgür, Q. Fan, 2007, SPIE OPTO.

Heterostructure designs for enhanced performance and reliability in GaN HFETs: camelback channels

Hadis Morkoç, Jacob H. Leach, Arvydas Matulionis, 2011, OPTO.

Recent developments in GaAs-based high-speed devices

Naresh Chand, Hadis Morkoç, 1986 .

Plasmon-assisted dissipation of LO-mode heat in nitride 2DEG channels

Hadis Morkoç, Arvydas Matulionis, J. Liberis, 2010, OPTO.

Temperature-dependent time-resolved photoluminescence measurements of (1-101)-oriented semi-polar AlGaN/GaN MQWs

Hadis Morkoç, Ümit Özgür, Natalia Izyumskaya, 2015, Photonics West - Optoelectronic Materials and Devices.

Impact of ballistic electron transport on efficiency of InGaN based LEDs

Hadis Morkoç, Ümit Özgür, V. Avrutin, 2011, OPTO.

AlGaN/GaN MODFET regrown by rf-MBE on MOCVD templates

Hadis Morkoç, J. Xie, Lin Zhou, 2007, SPIE OPTO.

Window for better reliability of nitride heterostructure field effect transistors

Hadis Morkoç, Ümit Özgür, Vitaliy Avrutin, 2012, Microelectron. Reliab..

Microwave performance of AlGaN/AlN/GaN-based single and coupled channels HFETs

Hadis Morkoç, Ümit Özgür, Xiang Li, 2013, Photonics West - Optoelectronic Materials and Devices.

Optical properties of polar, nonpolar, and semipolar InGaN/GaN multiple quantum wells on sapphire

Hadis Morkoç, Xianfeng Ni, J. Xie, 2008, SPIE OPTO.

Low dislocation density GaN grown by MOCVD with SiNx nano-network

John V. Foreman, Hadis Morkoç, Ümit Özgür, 2007, SPIE OPTO.

Temperature dependent behavior of the SPV for n-type GaN

Hadis Morkoç, M. A. Reshchikov, Huiyong Liu, 2012, OPTO.

Spin-orbit coupling in AlGaN/AlN/GaN heterostructures with a polarization induced two-dimensional electron gas

Cagliyan Kurdak, Vladimir Litvinov, Hadis Morkoç, 2008, SPIE OPTO.

Measurements of off-state electrical stress in InAlN/AlN/GaN heterostructure field-effect transistors with varying In compositions

Hadis Morkoç, Ümit Özgür, Cemil Kayis, 2012, OPTO.

GaN-based vertical cavity lasers with semiconductor/dielectric and all dielectric reflectors

Hadis Morkoç, Ümit Özgür, V. Avrutin, 2013, Photonics West - Optoelectronic Materials and Devices.

Hot phonons in InAlN/AlN/GaN heterostructure 2DEG channels

Hadis Morkoç, Arvydas Matulionis, H. Morkoç, 2009, OPTO.

Degradation analysis of InAlN/AlN/GaN heterostructure field-effect transistors using low-frequency noise and current-transient methods: hot-phonon effects

Hadis Morkoç, Ümit Özgür, Xiang Li, 2012, OPTO.

GaN-Based Light-Emitting Diodes: Efficiency at High Injection Levels

Xing Li, Hadis Morkoç, Ümit Özgür, 2010, Proceedings of the IEEE.

Effect of electron density on cutoff frequency of III-N HFETs

Hadis Morkoç, Arvydas Matulionis, 2014, Photonics West - Optoelectronic Materials and Devices.

The impact of active layer design on quantum efficiency of InGaN light emitting diodes

Hadis Morkoç, Ümit Özgür, V. Avrutin, 2012, OPTO.

Ferromagnetism in ZnO- and GaN-Based Diluted Magnetic Semiconductors: Achievements and Challenges

Hadis Morkoç, Ümit Özgür, Natalia Izyumskaya, 2010, Proceedings of the IEEE.

Status of Reliability of GaN-Based Heterojunction Field Effect Transistors

Hadis Morkoç, Jacob H. Leach, H. Morkoç, 2010, Proceedings of the IEEE.

Physics and technology of molecular and biotechnology systems

Hadis Morkoç, 2003 .

High reflectivity ultraviolet distributed Bragg reflector based on AlGaN/AlGaN multilayer

Hadis Morkoç, Ryoko Shimada, Jinqiao Xie, 2007, SPIE OPTO.

Depth distribution of carrier lifetimes in semipolar (11macron01) GaN grown by MOCVD on patterned Si substrates

Sebastian Metzner, Hadis Morkoç, Ümit Özgür, 2013, Photonics West - Optoelectronic Materials and Devices.

Ferroelectric field effect transistor with a double-gate structure on AlGaN/GaN heterostructures

Hadis Morkoç, Vitaliy Avrutin, Bo Xiao, 2009, OPTO.

Non-polar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition

Hadis Morkoç, Xianfeng Ni, Xiang Li, 2010, OPTO.

Deep inductively coupled plasma etching of ELO-GaN grown with high fill factor

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2011, OPTO.

Optical properties of nonpolar (1-100) and semipolar (1-101)GaN grown by MOCVD on Si patterned substrates

Sebastian Metzner, Hadis Morkoç, Lin Zhou, 2011, OPTO.

Doping Asymmetry Problem in ZnO: Current Status and Outlook

Hadis Morkoç, Vitaliy Avrutin, Donald J. Silversmith, 2009, Proceedings of the IEEE.

Optical properties of m-plane GaN grown on patterned Si(112) substrates by MOCVD using a two-step approach

Sebastian Metzner, Hadis Morkoç, Ümit Özgür, 2014, Photonics West - Optoelectronic Materials and Devices.

Transient current spectroscopy of lattice matched InAlN/AlN/GaN HFETs for identification of traps resulting in gate lag

Hadis Morkoç, Ümit Özgür, J. Xie, 2009, OPTO.

Enhancement of indium incorporation to InGaN MQWs on AlN/GaN periodic multilayers

Hadis Morkoç, Ümit Özgür, Natalia Izyumskaya, 2016, SPIE OPTO.

Magneto-transport properties of MOVPE-grown AlxGa1-xN/AlN/GaN heterostructures with high-mobility two-dimensional electron gas

Cagliyan Kurdak, Hadis Morkoç, Xianfeng Ni, 2007, SPIE OPTO.

Indium-incorporation efficiency in semipolar (11-22) oriented InGaN-based light emitting diodes

Sebastian Metzner, Hadis Morkoç, Ümit Özgür, 2015, Photonics West - Optoelectronic Materials and Devices.

Small Signal Equivalent Circuit Modeling for AlGaN/GaN HFET: Hybrid Extraction Method for Determining Circuit Elements of AlGaN/GaN HFET

Qian Fan, Hadis Morkoç, Jacob H. Leach, 2010, Proceedings of the IEEE.

Recombination and diffusion processes in polar and nonpolar bulk GaN investigated by time-resolved photoluminescence and nonlinear optical techniques

Hadis Morkoç, Ümit Özgür, Serdal Okur, 2012, OPTO.

Electrical properties of BeMgZnO/ZnO heterostructures with high-density two-dimensional electron gas

Kai Ding, Hadis Morkoç, Natalia Izyumskaya, 2019, OPTO.

Effect of ion damage on optical properties of ZnO films grown by plasma-assisted MBE

John V. Foreman, Hadis Morkoç, Ryoko Shimada, 2008, SPIE OPTO.

ZnO hybrid microcavities grown by plasma assisted molecular beam epitaxy

Hadis Morkoç, Ryoko Shimada, Vitaliy Avrutin, 2008, SPIE OPTO.

Wurtzite/zinc-blende electronic-band alignment in basal-plane stacking faults in semi-polar GaN

Hadis Morkoç, Ümit Özgür, Natalia Izyumskaya, 2016, SPIE OPTO.

Effect of MOCVD growth conditions on the optical properties of semipolar (1-101) GaN on Si patterned substrates

Sebastian Metzner, David J. Smith, Hadis Morkoç, 2012, OPTO.

Optical investigation of microscopic defect distribution in semi-polar (1-101 and 11-22) InGaN light-emitting diodes

Hadis Morkoç, Ümit Özgür, Natalia Izyumskaya, 2016, SPIE OPTO.

Effect of UV exposure on the surface charge behavior for GaN

Hadis Morkoç, Xianfeng Ni, M. A. Reshchikov, 2010, OPTO.

Microwave Ferrites, Part 1: Fundamentals and self biasing

Hadis Morkoç, Ümit Özgür, Yahya Alivov, 2009 .

Kelvin probe measurements of p-type GaN

Hadis Morkoç, Xianfeng Ni, M. A. Reshchikov, 2011, OPTO.

Internal quantum efficiency of m-plane InGaN on Si and GaN

Hadis Morkoç, Xianfeng Ni, Ryoko Shimada, 2010, OPTO.

Influence of annealing in oxygen ambient on crystal properties of rf-sputtered PZT layers on ZnO substrates

Hadis Morkoç, Ya. I. Alivov, Bo Xiao, 2007, SPIE OPTO.

Strong carrier localization in stacking faults in semipolar (11-22) GaN

Hadis Morkoç, Ümit Özgür, Natalia Izyumskaya, 2015, Photonics West - Optoelectronic Materials and Devices.

Challenges and Opportunities in GaN and ZnO Devices and Materials

Hadis Morkoç, Jen-Inn Chyi, Donald J. Silversmith, 2010, Proc. IEEE.

Investigation of microwave and noise properties of InAlN/GaN HFETs after electrical stress: role of surface effects

Hadis Morkoç, Ümit Özgür, Fan Zhang, 2013, Photonics West - Optoelectronic Materials and Devices.

Epitaxial lateral overgrowth of (11¯00) m-plane GaN on m-plane 6H-SiC by metalorganic chemical vapor deposition

Hadis Morkoç, Ümit Özgür, S. Chevtchenko, 2008, SPIE OPTO.

Enhancement of optical and structural quality of semipolar (11-22) GaN by introducing nanoporous SiNx interlayers

Sebastian Metzner, Hadis Morkoç, Ümit Özgür, 2015, Photonics West - Optoelectronic Materials and Devices.

Exciton localization and large Stokes shift in quaternary BeMgZnO grown by molecular beam epitaxy

Hadis Morkoç, Ümit Özgür, Shopan Hafiz, 2016, SPIE OPTO.

Electrical properties of ZnO:Ga as a transparent conducting oxide in InGaN based light emitting diodes

Hadis Morkoç, Ümit Özgür, V. Avrutin, 2012, OPTO.

Studies of longitudinal optical phonons in GaN by subpicosecond time-resolved Raman spectroscopy

Hadis Morkoç, Kong T. Tsen, Juliann G. Kiang, 2007, SPIE OPTO.

n-Al0.15Ga0.85 N/p-6H-SiC heterostructure and based bipolar transistor

Qian Fan, Hadis Morkoç, Ya. I. Alivov, 2010, Microelectronics Reliability.

ZnO Devices and Applications: A Review of Current Status and Future Prospects

Daniel Hofstetter, Hadis Morkoç, Ümit Özgür, 2010, Proceedings of the IEEE.

Two-dimensional drift-diffusion simulation of GaN HFETs

Hadis Morkoç, Q. Fan, H. Morkoç, 2011, OPTO.

InGaN based multi-double heterostructure light-emitting diodes with electron injector layers

Hadis Morkoç, Ümit Özgür, V. Avrutin, 2013, Photonics West - Optoelectronic Materials and Devices.

Welcome and Introduction to SPIE Conference 11686

Hadis Morkoç, Ulrich T. Schwarz, Hiroshi Fujioka, 2021 .

Transport properties of Sn‐doped AlxGa1−xAs grown by molecular beam epitaxy

Hadis Morkoç, A. Y. Cho, H. Morkoç, 1980 .

Semiconductor solar cells: Recent progress in terrestrial applications

Hadis Morkoç, V. Avrutin, Natalia Izyumskaya, 2011 .

Mosaic growth of GaN on (0001) sapphire: A high-resolution electron microscopy and crystallographic study of threading dislocations from low-angle to high-angle grain boundaries

Hadis Morkoç, P. Ruterana, H. Morkoç, 2000 .

Measurements of generation‐recombination effect by low‐frequency phase‐noise technique in AlGaN/GaN MOSHFETs

Peter Händel, Hadis Morkoç, Xiang Li, 2011 .

Polarization effects in nitride semiconductor device structures and performance of modulation doped field effect transistors

Hadis Morkoç, Roberto Cingolani, Bernard Gil, 1999 .

Effects of GaN passivation with SiO 2 and SiN x studied by photoluminescence and surface potential electric force microscopy

Hadis Morkoç, M. A. Reshchikov, S. Chevtchenko, 2005 .

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

Hadis Morkoç, Xianfeng Ni, Ryoko Shimada, 2008 .

Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried-heterostructure quantum well lasers grown by molecular beam epitaxy

Hadis Morkoç, Amnon Yariv, S. Sanders, 1989 .

GROWTH, STRUCTURES, AND OPTICAL PROPERTIES OF III-NITRIDE QUANTUM DOTS

Hadis Morkoç, Daming Huang, Michael A. Reshchikov, 2002 .

Analytical model for I-V characteristics of ion-implanted MESFET's with heavily doped channel

Mahesh B. Patil, Hadis Morkoç, G. B. Gao, 1990 .

Transient annealing of modulation-doped GaAs/AlxGa1-xAs heterostructures

Hadis Morkoç, H. Morkoç, T. Henderson, 1984 .

Gallium arsenide and other compound semiconductors on silicon

Hadis Morkoç, S. Iyer, Hartmut Zabel, 1990 .

Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy

Hadis Morkoç, Paolo Visconti, Feng Yun, 2001 .

GaN epitaxy on thermally treated c-plane bulk ZnO substrates with O and Zn faces

Hadis Morkoç, Jeff Nause, Xing Gu, 2004 .

PICOSECOND RAMAN STUDIES OF THE ELECTRON-PHONON INTERACTIONS IN ALXGA1-XAS: NONMONOTONIC DEPENDENCE UPON THE ALLOY COMPOSITION

Hadis Morkoç, David K. Ferry, H. Morkoç, 1998 .

InGaN light-emitting diodes: Efficiency-limiting processes at high injection

Hadis Morkoç, Ümit Özgür, V. Avrutin, 2013 .

Hot‐electron drift velocity and hot‐phonon decay in AlInN/AlN/GaN

Hadis Morkoç, Arvydas Matulionis, J. Liberis, 2011 .

Ultrafast all-optical gate with subpicosecond on and off response time

Nasser N Peyghambarian, Hyatt M. Gibbs, Hadis Morkoç, 1986 .

GaN-based optical and electronic devices

Hadis Morkoç, H. Morkoç, 2009 .

InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes

Hadis Morkoç, Xianfeng Ni, V. Avrutin, 2010 .

4H–SiC photoconductive switching devices for use in high-power applications

Stephen E. Saddow, Hadis Morkoç, C. B. Roberts, 2003 .

Surface charging and current collapse in an AlGaN∕GaN heterostructure field effect transistor

Hadis Morkoç, A. A. Baski, Seydi Dogan, 2005 .

Emerging gallium nitride based devices

Hadis Morkoç, H. Morkoç, A. Salvador, 1995, Proc. IEEE.

Effect of in situ and ex situ annealing on dislocations in GaAs on Si substrates

Miles V. Klein, Hadis Morkoç, Romuald Houdré, 1987 .

Determination of carrier diffusion length in GaN

Sebastian Metzner, Hadis Morkoç, Ümit Özgür, 2015 .

Thermal stability of GaN investigated by low‐temperature photoluminescence spectroscopy

Hadis Morkoç, B. Sverdlov, H. Morkoç, 1993 .

The Microstructure of Ti/Al and TiN Ohmic Contacts to Gallium Nitride

F. Huet, Hadis Morkoç, Pierre Ruterana, 1999 .

Pseudomorphic InGaAs/AlGaAs modulation-doped FET's with reduced low-frequency noise and thermally stable performance

Hadis Morkoç, W. Kopp, H. Morkoç, 1987 .

High Speed, Low Noise Ultraviolet Photodetectors Based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n) Structures

Hadis Morkoç, Michael J. Estes, Tuoc Dang, 1997 .

Resonant cavity enhanced InP/InGaAs photodiode on Si using epitaxial liftoff

Hadis Morkoç, Andrei Botchkarev, B. Sverdlov, 1994 .

Anisotropy of free-carrier absorption and diffusivity in m-plane GaN

Hadis Morkoç, Ümit Özgür, Kęstutis Jarašiūnas, 2012 .

Ultrafast decay of hot phonons in an AlGaN/AlN/AlGaN/GaN camelback channel

Hadis Morkoç, Jacob H. Leach, M. Ramonas, 2011 .

Near-field optical spectroscopy and microscopy of self-assembled GaN∕AlN nanostructures

Motoichi Ohtsu, Brian P. Gorman, Hadis Morkoç, 2005 .

The effects of surface metallization on the thermal behavior of GaAs microwave power devices

Hadis Morkoç, Xiang Gui, G. B. Gao, 1994 .

Luminescence from defects in GaN

Hadis Morkoç, M. A. Reshchikov, H. Morkoç, 2006 .

Si/SiGe heterostructures and devices

Hadis Morkoç, H. Morkoç, G. Zhou, 1993 .

Nonpolar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2009 .

Coupling of spontaneous emission from GaN-AlN quantum dots into silver surface plasmons.

Hadis Morkoç, Arup Neogi, Takamasa Kuroda, 2005, Optics letters.

Nitride Semiconductors and Devices

Hadis Morkoç, H. Morkoç, 1999 .

Structural Defects in Laterally Overgrown GaN Layers Grown on Non-polar Substrates

Hadis Morkoç, Xianfeng Ni, Zuzanna Liliental-Weber, 2006 .

Epitaxial lateral overgrowth of non-polar GaN( 1 1̄ 0 0) on Si(1 1 2) patterned substrates by MOCVD

Sebastian Metzner, Hadis Morkoç, Lin Zhou, 2011 .

GaN-based modulation doped FETs and UV detectors

Hadis Morkoç, Aldo Di Carlo, Roberto Cingolani, 2002 .

Hot-electron energy relaxation time in AlInN/AlN/GaN 2DEG channels

Hadis Morkoç, Jacob H. Leach, Arvydas Matulionis, 2008 .

Ballistic transport in InGaN-based LEDs: impact on efficiency

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2011 .

Spontaneous and piezoelectric polarization effects on the output characteristics of AlGaN/GaN heterojunction modulation doped FETs

A. Di Carlo, Paolo Lugli, Hadis Morkoç, 2001 .

Study of leakage defects on GaN films by conductive atomic force microscopy

Hadis Morkoç, J. C. Moore, A. A. Baski, 2007 .

Transport in modulation‐doped structures (AlxGa1−xAs/GaAs) and correlations with Monte Carlo calculations (GaAs)

Hadis Morkoç, T. J. Drummond, T. Drummond, 1982 .

Surface band bending of a-plane GaN studied by scanning Kelvin probe microscopy

Hadis Morkoç, Xianfeng Ni, Q. Fan, 2006 .

Spontaneous polarization and piezoelectric field in G a N / A l 0.15 Ga 0.85 N quantum wells: Impact on the optical spectra

G. Coli, A. Di Carlo, Paolo Lugli, 2000 .

Analysis of energy states in modulation doped multiquantum well heterostructures

Hadis Morkoç, G. Ji, H. Morkoç, 1990 .

Temperature dependence of current gain in AlGaAs/GaAs heterojunction bipolar transistors

Naresh Chand, Hadis Morkoç, R. Fischer, 1984 .

Long carrier lifetimes in GaN epitaxial layers grown using TiN porous network templates

S. S. Park, Hadis Morkoç, Ümit Özgür, 2005 .

Emitter ballasting resistor design for, and current handling capability of AlGaAs/GaAs power heterojunction bipolar transistors

D. L. Blackburn, Hadis Morkoç, M. S. Unlu, 1991 .

Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors

Hadis Morkoç, Ravi Droopad, David K. Ferry, 1994 .

Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells

Hadis Morkoç, Xianfeng Ni, Ryoko Shimada, 2008 .

Characterization of GaAs grown on Si epitaxial layers on GaAs substrates

Hadis Morkoç, N. Otsuka, H. Morkoç, 1991 .

Electron density of the two‐dimensional electron gas in modulation doped layers

Michael S. Shur, Hadis Morkoç, T. J. Drummond, 1983 .

Dynamics of a band‐edge transition in GaN grown by molecular beam epitaxy

Hadis Morkoç, Guangde Chen, Andrei Botchkarev, 1995 .

Chapter 8 Electronic and Optical Properties of III–V Nitride based Quantum Wells and Superlattices

Hadis Morkoç, H. Morkoç, A. Salvador, 1997 .

Instabilities in modulation doped field-effect transistors (MODFETs) at 77 K

Michael S. Shur, Hadis Morkoç, T. J. Drummond, 1983 .

III-Nitride Based Light Emitting Diodes and Applications

Hadis Morkoç, Jung Han, Hiroshi Amano, 2013 .

Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2010 .

Surface Treatment and Layer Structure in 2H-GaN Grown on the (0001) Si surface of 6H-SiC by MBE

Hadis Morkoç, Pierre Ruterana, Gerard Nouet, 1997 .

Optical and electrical properties of ZnMnO layers grown by peroxide MBE

Hadis Morkoç, Ümit Özgür, V. Avrutin, 2006 .

Recent Development of Boron Nitride towards Electronic Applications

Hadis Morkoç, Ümit Özgür, Natalia Izyumskaya, 2017 .

Electrical conduction in silicon nitrides deposited by plasma enhanced chemical vapour deposition

Hadis Morkoç, Meng Tao, S. Noor Mohammad, 1996 .

Microwave ferrites, part 2: passive components and electrical tuning

Hadis Morkoç, Ü. Özgür, Yahya Alivov, 2009 .

Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy

Cagliyan Kurdak, S. S. Park, Hadis Morkoç, 2001 .

Low field mobility of 2‐d electron gas in modulation doped AlxGa1−xAs/GaAs layers

Michael S. Shur, Hadis Morkoç, T. J. Drummond, 1983 .

Nonalloyed ohmic contacts on GaN using InN/GaN short‐period superlattices

Hadis Morkoç, H. Morkoç, M. Lin, 1994 .

Two-step passivation for enhanced InGaN/GaN light emitting diodes with step graded electron injectors

Atilla Aydinli, Hadis Morkoç, Ümit Özgür, 2017 .

Intrinsic gate delay of GaAs/AlGaAs single and double heterostructure I/sup 2/L circuits

Hadis Morkoç, B. Mazhari, H. Morkoç, 1992 .

Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy

Hadis Morkoç, Andrei Botchkarev, Angus Rockett, 1996 .

Resonant surface plasmon-induced modification of photoluminescence from GaN/AlN quantum dots

Hadis Morkoç, Arup Neogi, H. Morkoç, 2004 .

COLLECTOR-EMITTER OFFSET VOLTAGE IN HETEROJUNCTION BIPOLAR TRANSISTORS

Hadis Morkoç, B. Mazhari, G. B. Gao, 1991 .

Characteristics of free-standing hydride-vapor- phase-epitaxy-grown GaN with very low defect concentration

Hadis Morkoç, Roberto Cingolani, Paolo Visconti, 2000 .

Bias dependent two-channel conduction in InAlN/AlN/GaN structures

Jerry R. Meyer, Cagliyan Kurdak, Hadis Morkoç, 2010 .

Structural properties of InN films grown on GaAs substrates: observation of the zincblende polytpe

Hadis Morkoç, David J. Smith, N. Teraguchi, 1993 .

Transparent conducting oxides for electrode applications in light emitting and absorbing devices

Hadis Morkoç, V. Avrutin, Natalia Izyumskaya, 2010 .

Photoluminescence from structural defects in GaN

Jacek B. Jasinski, Hadis Morkoç, M. A. Reshchikov, 2003 .

Optical and Magnetic Properties of ZnO:V Prepared by Ion Implantation

Hadis Morkoç, Ümit Özgür, V. Avrutin, 2007 .

Effect of ambient on photoluminescence from GaN grown by molecular-beam epitaxy

Hadis Morkoç, M. A. Reshchikov, H. Morkoç, 2003 .

Degradation in InAlN/AlN/GaN heterostructure field-effect transistors as monitored by low-frequency noise measurements: Hot phonon effects

Hadis Morkoç, Xiang Li, Ümit Özgür, 2011 .

Energy transfer in ZnO-anthracene hybrid structure

Hadis Morkoç, Arup Neogi, Ryoko Shimada, 2012 .

Camelback channel for fast decay of LO phonons in GaN heterostructure field-effect transistor at high electron density

Hadis Morkoç, V. Avrutin, Jacob H. Leach, 2011 .

Photoconductivity effects in extremely high mobility modulation‐doped (Al,Ga)As/GaAs heterostructures

Hadis Morkoç, Robert E. Thorne, A. Y. Cho, 1982 .

Mobility degradation in a quantum well heterostructure of a GaAs/AlGaAs prototype

Hadis Morkoç, Vijay K. Arora, H. Morkoç, 1987 .

Carrier dynamics under two‐ and single‐photon excitation in bulk GaN

Hadis Morkoç, Ümit Özgür, Serdal Okur, 2012 .

Structural defects due to interface steps and polytypism in III-V semiconducting materials: A case study using high-resolution electron microscopy of the 2H-AlN/6H-SiC interface

Hadis Morkoç, P. Ruterana, H. Morkoç, 1997 .

Investigation of forward and reverse current conduction in GaN films by conductive atomic force microscopy

Hadis Morkoç, A. A. Baski, Jinqiao Xie, 2004 .

Normally‐on and normally‐off camel diode gate GaAs field effect transistors for large scale integration

Hadis Morkoç, Robert E. Thorne, T. J. Drummond, 1982 .

Surface plasmon enhanced UV emission in AlGaN/GaN quantum well

Motoichi Ohtsu, Hadis Morkoç, Arup Neogi, 2010 .

Structural and electrical properties of Pb(Zr,Ti)O3 grown on (0001) GaN using a double PbTiO3∕PbO bridge layer

Hadis Morkoç, Natalia Izyumskaya, Vitaliy Avrutin, 2007 .

Fabrication and current-voltage characterization of a ferroelectric lead zirconate titanate/AlGaN∕GaN field effect transistor

Sang-Jun Cho, Hadis Morkoç, Q. Fan, 2006 .

Near-field scanning optical microscopy and time-resolved optical characterization of epitaxial lateral overgrown c-plane and a-plane GaN

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2006 .

Progress and prospects of group-III nitride semiconductors

Hadis Morkoç, S. N Mohammad, H. Morkoç, 1996 .

Microwave ferrites, part 1: fundamental properties

Hadis Morkoç, Ü. Özgür, Yahya Alivov, 2009 .

High performance inverted and large current double interface modulation‐doped field‐effect transistors with the bulk (Al,Ga)As replaced by superlattice at the inverted interface

Hadis Morkoç, W. T. Masselink, R. Fischer, 1984 .

Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2010 .

High-κ dielectrics and advanced channel concepts for Si MOSFET

Hadis Morkoç, Yahya Alivov, H. Morkoç, 2008 .

Enhanced luminescence from AlGaAs/GaAs single quantum well structures through improved interfaces

Miles V. Klein, Hadis Morkoç, Yun-Chorng Chang, 1984 .

Time-resolved Raman studies of the decay of the longitudinal optical phonons in wurtzite GaN

Hadis Morkoç, David K. Ferry, Kong-Thon Tsen, 1998 .

Field-assisted emission in AlGaN/GaN heterostructure field-effect transistors using low-frequency noise technique

Hadis Morkoç, Xiang Li, Ümit Özgür, 2011 .

Optical investigation of highly strained InGaAs‐GaAs multiple quantum wells

Hadis Morkoç, Romuald Houdré, G. Ji, 1987 .

Recombination dynamics of free and localized excitons in GaN/Ga 0.93 Al 0.07 N quantum wells

Hadis Morkoç, Pierre Lefebvre, Won-Seok Kim, 1998 .

GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxy

Naresh Chand, Hadis Morkoç, R. Fischer, 1985 .

High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures

Hadis Morkoç, B. Goldenberg, H. Morkoç, 1997 .

Deep centers in n-GaN grown by reactive molecular beam epitaxy

David C. Look, Z-Q. Fang, Hadis Morkoç, 1998 .

Charge transport by surface acoustic waves in GaAs

Hadis Morkoç, B. J. Hunsinger, Michael J. Hoskins, 1982 .

Plasmon-controlled optimum gate bias for GaN heterostructure field-effect transistors

Fan Zhang, Hadis Morkoç, V. Avrutin, 2013 .

Thermal conductivity of bulk ZnO after different thermal treatments

Sang-Jun Cho, Fred H. Pollak, Hadis Morkoç, 2006 .

Saga of efficiency degradation at high injection in InGaN light emitting diodes

Enrico Bellotti, Hadis Morkoç, Ümit Özgür, 2014 .

A review of III-V semiconductor based metal-insulator- semiconductor structures and devices

Hadis Morkoç, H. Morkoç, D. Mui, 1993 .

Degradation and phase noise of InAlN/AlN/GaN heterojunction field effect transistors: Implications for hot electron/phonon effects

Hadis Morkoç, Xiang Li, Ümit Özgür, 2012 .

Effect of lattice mismatch on gate lag in high quality InAlN/AlN/GaN HFET structures

Xing Li, Hadis Morkoç, Xianfeng Ni, 2010 .

A GaN-based two-sensor array for methane detection in an ethanol environment

Ion Tiginyanu, Hadis Morkoç, V. V. Ursaki, 2006 .

Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes

Hadis Morkoç, Xianfeng Ni, Ü. Özgür, 2009 .

Nonequilibrium electron distributions and phonon dynamics in wurtzite GaN

Ravindra P. Joshi, Hadis Morkoç, David K. Ferry, 1996 .

The structure of GaN layers grown on SiC and sapphire by molecular beam epitaxy

Hadis Morkoç, Pierre Ruterana, Andrei Botchkarev, 1997 .

InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substrates

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2010 .

Effect of hydrostatic pressure on the dc characteristics of AlGaN∕GaN heterojunction field effect transistors

Hadis Morkoç, P. Paul Ruden, Kyung-Ah Son, 2006 .

Backilluminated GaN/AlGaN heterojunction ultraviolet photodetector with high internal gain

Robert R. Alfano, Hadis Morkoç, Feng Yun, 2002 .

Wavelength selective optical logic and interconnects

Serdar Tasiran, Hadis Morkoç, M. S. Unlu, 1993 .

Diffusion of As and Ge during growth of GaAs on Ge substrate by molecular‐beam epitaxy: Its effect on the device electrical characteristics

Naresh Chand, Hadis Morkoç, H. Morkoç, 1986 .

GaN resistive hydrogen gas sensors

Hadis Morkoç, S. Chevtchenko, Feng Yun, 2005 .

Optical studies of strain and defect distribution in semipolar (11¯01) GaN on patterned Si substrates

Sebastian Metzner, Hadis Morkoç, Ümit Özgür, 2013 .

Band bending near the surface in GaN as detected by a charge sensitive probe

Hadis Morkoç, M. A. Reshchikov, H. Morkoç, 2003 .

Reduction of dark current in photodiodes by the use of a resonant cavity

Hadis Morkoç, Andrei Botchkarev, N. Teraguchi, 1993 .

Refractive indices of wurtzite and zincblende GaN

Hadis Morkoç, B. Sverdlov, H. Morkoç, 1993 .

Surface recombination in GaAs PN junction diode

Hadis Morkoç, B. Mazhari, H. Morkoç, 1993 .

Room‐temperature stimulated emission in GaN/AlGaN separate confinement heterostructures grown by molecular beam epitaxy

Hadis Morkoç, Theodore J. Schmidt, O. Aktas, 1996 .

Subpicosecond time-resolved Raman studies of LO phonons in GaN: Dependence on photoexcited carrier density

Hadis Morkoç, David K. Ferry, Kong-Thon Tsen, 2006 .

Recent developments in ohmic contacts for III-V compound semiconductors

Hadis Morkoç, G. B. Gao, T. C. Shen, 1992 .

Negative output differential resistance in AlGaAs/GaAs heterojunction bipolar transistors

Hadis Morkoç, G. B. Gao, H. Morkoç, 1992 .

Low threshold laser operation at room temperature in GaAs/(Al,Ga)As structures grown directly on (100)Si

Hadis Morkoç, R. Fischer, W. Kopp, 1986 .

Role of the surface in the electrical and optical properties of GaN

Hadis Morkoç, M. A. Reshchikov, A. A. Baski, 2009 .

Chromium and tellurium redistribution in GaAs and Al0.3Ga0.7As grown by molecular beam epitaxy

Hadis Morkoç, A. Y. Cho, Charles A. Evans, 1980 .

Antiphase domain free growth of GaAs on Ge in GaAs/Ge/GaAs heterostructures

Hadis Morkoç, H. Morkoç, S. Strite, 1990 .

Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN

Shuji Nakamura, Hadis Morkoç, Pierre Lefebvre, 1999 .

Front Matter: Volume 8625

Hadis Morkoç, Joachim Piprek, Euijoon Yoon, 2013 .

I-V characteristics of Au∕Ni Schottky diodes on GaN with SiNx nanonetwork

Hadis Morkoç, Xianfeng Ni, S. Chevtchenko, 2006 .

Negative differential resistance through real‐space electron transfer

Karl Hess, Hadis Morkoç, Hisashi Shichijo, 1979 .

A new circuit model for tunneling related trapping at insulator-semiconductor interfaces in accumulation

John Reed, Hadis Morkoç, H. Morkoç, 1992 .

Transient photovoltage in GaN

Hadis Morkoç, M. A. Reshchikov, A. A. Baski, 2005 .

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

Hadis Morkoç, Xiang Li, Ümit Özgür, 2013 .

High-frequency output characteristics of AlGaAs/GaAs heterojunction bipolar transistors

Hadis Morkoç, M. S. Unlu, G. B. Gao, 1990 .

High transconductance normally-off GaN MODFETs

Hadis Morkoç, Andrei Botchkarev, H. Morkoç, 1995 .

Nature of Mg impurities in GaN

Hadis Morkoç, Hongxing Jiang, Andrei Botchkarev, 1996 .

Electron velocity overshoot in a GaAs-based p-i-n nanostructure semiconductor observed by transient subpicosecond Raman spectroscopy

Hadis Morkoç, David K. Ferry, Kong-Thon Tsen, 1995 .

Defect reduction with quantum dots in GaN grown on sapphire substrates by molecular beam epitaxy

Hadis Morkoç, Feng Yun, A. A. Baski, 2002 .

Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopy

Hadis Morkoç, Ankur Agarwal, Walter R. L. Lambrecht, 1994 .

Enhanced radiative efficiency in GaN quantum dots grown by molecular beam epitaxy

Hadis Morkoç, Arup Neogi, Henry O. Everitt, 2003 .

InGaN based light emitting diodes utilizing Ga doped ZnO as a highly transparent contact to p-GaN

Hadis Morkoç, Xiang Li, Xianfeng Ni, 2011 .

Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy

Miles V. Klein, Hadis Morkoç, J. H. Mazur, 1985 .

Mechanisms of band‐edge emission in Mg‐doped p‐type GaN

Hadis Morkoç, Guangde Chen, Andrei Botchkarev, 1996 .

The effect of ballistic and quasi‐ballistic electrons on the efficiency droop of InGaN light emitting diodes

Xing Li, Hadis Morkoç, Xianfeng Ni, 2010 .

Optical properties of GaN/AlGaN multiple quantum well microdisks

Hadis Morkoç, K. C. Zeng, Bei-Wei Zhang, 1997 .

Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple quantum wells

Liang Dong, Hadis Morkoç, Ümit Özgür, 2013 .

Dislocation reduction in epitaxial GaAs on Si(100)

Hadis Morkoç, Hartmut Zabel, N. Otsuka, 1986 .

Self-assembled deoxyguanosine based molecular electronic device on GaN substrates

Sang-Jun Cho, Jianyou Li, Hadis Morkoç, 2008 .

Resonant tunneling oscillations in a GaAs‐AlxGa1−xAs heterostructure at room temperature

Hadis Morkoç, R. Fischer, Paul D. Coleman, 1985 .

Carrier dynamics in bulk GaN

Hadis Morkoç, Ümit Özgür, Serdal Okur, 2012 .

Direct evidence of tensile strain in wurtzite structure n-GaN layers grown on n-Si(111) using AlN buffer layers

Hadis Morkoç, O. Gürdal, Gert Irmer, 1999 .

Monolithic integration of GaAs/AlGaAs modulation‐doped field‐effect transistors and N‐metal‐oxide‐semiconductor silicon circuits

Hadis Morkoç, J. Detry, R. Fischer, 1985 .

An alternative material for transparent antennas for commercial and medical applications

Hadis Morkoç, Ümit Özgür, Erdem Topsakal, 2017 .

Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency

Xing Li, Hadis Morkoç, Xianfeng Ni, 2010 .

GaInAs/GaAs strained layer MQW electroabsorption optical modulator and self-electro-optic effect device

Hadis Morkoç, M. S. Unlu, S. Kalem, 1988 .

Gallium Nitride Materials and Devices II

Hadis Morkoç, Cole W. Litton, H. Morkoç, 2007 .

Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2010 .

Material properties of high‐quality GaAs epitaxial layers grown on Si substrates

Hadis Morkoç, Hartmut Zabel, R. Fischer, 1986 .

Double heterojunction GaAs/AlxGa1−xAs bipolar transistors prepared by molecular beam epitaxy

Hadis Morkoç, R. Fischer, W. G. Lyons, 1983 .

ELECTRICAL PROPERTIES OF GAAS/GAN/GAAS SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR STRUCTURES

Hadis Morkoç, J. Thornton, H. Morkoç, 1991 .

Nanostructuring induced enhancement of radiation hardness in GaN epilayers

Ion Tiginyanu, Hadis Morkoç, V. V. Ursaki, 2007 .

Reactive ion etch damage on GaN and its recovery

Sang-Jun Cho, Hadis Morkoç, Xianfeng Ni, 2006 .

Thermal dependence of HBT high-frequency performance

Hadis Morkoç, G. B. Gao, H. Morkoç, 1990 .

Electrical conduction in platinum–gallium nitride Schottky diodes

Hadis Morkoç, Andrei Botchkarev, H. Morkoç, 1996 .

Stress test measurements of lattice-matched InAlN/AlN/GaN HFET structures

Cagliyan Kurdak, Hadis Morkoç, Xianfeng Ni, 2010 .

Microscopic distribution of extended defects and blockage of threading dislocations by stacking faults in semipolar (11¯01) GaN revealed from spatially resolved luminescence

Sebastian Metzner, Hadis Morkoç, Ümit Özgür, 2013 .

Photoluminescence studies of band‐edge transitions in GaN epitaxial layers grown by plasma‐assisted molecular beam epitaxy

Hadis Morkoç, Guangde Chen, Hongxing Jiang, 1996 .

Persistent photoluminescence in high-purity GaN

Hadis Morkoç, M. A. Reshchikov, V. Dmitriev, 2003 .

The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures

Ekmel Ozbay, Hadis Morkoç, Ümit Özgür, 2009 .

Self-assembled modified deoxyguanosines conjugated to GaN quantum dots for biophotonic applications

Jianyou Li, Hadis Morkoç, Arup Neogi, 2004 .

InP/InGaAs resonant cavity enhanced photodetector and light emitting diode with external mirrors on Si

Hadis Morkoç, Andrei Botchkarev, B. Sverdlov, 1994 .

Ferromagnetism of ZnO and GaN: A Review

Hadis Morkoç, F. Yun, H. Morkoç, 2005 .

Novel fluctuation‐based approach to optimization of frequency performance and degradation of nitride heterostructure field effect transistors

Hadis Morkoç, Jacob H. Leach, J. Liberis, 2011 .

Mobility Enhancement in Inverted AlxGa1-xAs/GaAs Modulation Doped Structures and Its Dependence on Donor-Electron Separation

Hadis Morkoç, Robert E. Thorne, T. J. Drummond, 1981 .

High electron mobility in nearly lattice-matched AlInN∕AlN∕GaN heterostructure field effect transistors

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2007 .

Reactive ion etching of GaN using BCl3

Hadis Morkoç, Leslie H. Allen, H. Morkoç, 1994 .

Nitride Semiconductor Devices: Fundamentals and Applications

Hadis Morkoç, H. Morkoç, 2013 .

Carrier Diffusivity in Highly Excited Bulk SiC, GaN, and Diamond Crystals by Optical Probes

Hadis Morkoç, Ümit Özgür, Milos Nesladek, 2012 .

Defect reduction in (112¯0) a-plane GaN by two- stage epitaxial lateral overgrowth

Necmi Biyikli, Hadis Morkoç, Xianfeng Ni, 2006 .

Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons

Xing Li, Cagliyan Kurdak, Hadis Morkoç, 2009 .

A small-signal equivalent-circuit model for GaAs-AlxGa1−xAs resonant tunneling heterostructures at microwave frequencies

Hadis Morkoç, Paul D. Coleman, D. G. Morgan, 1987 .

Study of SiNx and SiO2 passivation of GaN surfaces

Hadis Morkoç, Xianfeng Ni, M. A. Reshchikov, 2007 .

The effect of stair case electron injector design on electron overflow in InGaN light emitting diodes

Hadis Morkoç, Ümit Özgür, Shopan Hafiz, 2013 .

Exciton-phonon interaction in InGaN/GaN and GaN/AlGaN multiple quantum wells

Hadis Morkoç, Andrei Botchkarev, Hongxing Jiang, 1997 .

Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels

Hadis Morkoç, Xianfeng Ni, Jacob H. Leach, 2009 .

Ti/Al/Ni/Au Ohmic contacts for AlInN/AlN/GaN-based heterojunction field-effect transistors

Hadis Morkoç, Lin Zhou, Xianfeng Ni, 2010 .