T. Kammler

Versatile technology modeling for 22FDX platform development

J. Mazurier, P. Javorka, E. M. Bazizi, 2017, 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

22nm FDSOI technology for emerging mobile, Internet-of-Things, and RF applications

J. Mazurier, M. Vinet, P. Javorka, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Implementation and optimization of asymmetric transistors in advanced SOI CMOS technologies for high performance microprocessors

D. Greenlaw, M. Wiatr, T. Feudel, 2008, 2008 IEEE International Electron Devices Meeting.

Integration and optimization of embedded-sige, compressive and tensile stressed liner films, and stress memorization in advanced SOI CMOS technologies

D. Greenlaw, H.-J. Engelmann, N. Kepler, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

High performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOL

J. Gill, D. Mocuta, D. Greenlaw, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Review on Process-Induced Strain Techniques for Advanced Logic Technologies

D. Greenlaw, M. Wiatr, T. Feudel, 2007, 2007 15th International Conference on Advanced Thermal Processing of Semiconductors.

Structure and Kinetics of Lüders Band Slip in Cu-5 to 15 at% Al Single Crystals†‡

T. Kammler, A. Hampel, A. Hampel, 1993 .