Masahiko Kuraguchi

AlGaN/GaN HEMTのDCストレスによる信頼性評価(半導体表面・界面制御・評価と電子デバイスの信頼性)

津田 邦男, Takuma Suzuki, 川崎 久夫, 2007 .

Design of GaN Power-Device with Field Plate Structure

Ichiro Omura, Tsuneo Ogura, Wataru Saito, 2003 .

High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

Ichiro Omura, Hiromichi Ohashi, Tsuneo Ogura, 2003 .

High breakdown voltage AlGaN/GaN MIS‐HFET with low leakage current

Ichiro Omura, Wataru Saito, Yoshiharu Takada, 2005 .

C-band AIGaN/GaN HEMTs with 170W Output Power

Takuma Suzuki, Takashi Suzuki, Hisao Kawasaki, 2005 .