Qamar Ul Wahab

发表

Switching Behavior of Microwave Power Transistor Studied in TCAD for Switching Class Power Amplifiers and Experimental Verification by LDMOS based Class-F Power Amplifier

Muhammad Imran, Sher Azam, Christer Svensson, 2010 .

High Power, Single Stage SiGaN HEMT Class E Power Amplifier at GHz Frequencies

Sher Azam, Atila Alvandpour, Qamar Ul Wahab, 2010 .

RF output power analysis of SiC MESFET using large signal time domain simulations.

Christer Svensson, Staffan Rudner, Qamar Ul Wahab, 2001 .

Further enhancement of Load pull simulation technique to study non linear effects of LDMOS in TCAD

A. Kashif, Qamar Ul Wahab, Rolf Jonsson, 2008 .

Figure of merit for narrowband, wideband and multiband LNAs

Qamar Ul Wahab, Rashad Ramzan, Faiza Zafar, 2012 .

Computational load pull simulations of SiC microwave power transistors

Qamar Ul Wahab, Christer Svensson, S. Rudner, 2003 .

A sub-10mW, noise cancelling, wideband LNA for UWB applications

Qamar Ul Wahab, Rashad Ramzan, Sana Arshad, 2015 .

Enhancement in RF performance of LDMOS transistor utilizing large signal TCAD physical simulation

Christer Svensson, A. Kashif, Qamar Ul Wahab, 2007 .

A TCAD Approach to Design a Broadband Power Amplifier

Muhammad Imran, Sher Azam, Christer Svensson, 2010 .

Pulse input Class-C power amplifier response of SiC MESFET using physical transistor structure in TCAD

Sher Azam, Christer Svensson, Qamar Ul Wahab, 2008 .

RF power performance of SiC MESFET using a novel large signal simulation technique.

Christer Svensson, Staffan Rudner, Qamar Ul Wahab, 2002 .

Temperature dependence of avalanche breakdown for epitaxial diodes in 4H silicon carbide

Qamar Ul Wahab, Nils Nordell, Andrey O. Konstantinov, 1998 .

Study of avalanche breakdown and impact ionization in 4H silicon carbide

Qamar Ul Wahab, Nils Nordell, Andrey O. Konstantinov, 1998 .

A 3 kV Schottky barrier diode in 4H-SiC

Tsunenobu Kimoto, Qamar Ul Wahab, Anne Henry, 1998 .

Silicon carbide and diamond for high temperature device applications

Magnus Willander, Qamar Ul Wahab, Milan Friesel, 2006 .

Defect-driven inhomogeneities in Ni∕4H–SiC Schottky barriers

Qamar Ul Wahab, Leonard J. Brillson, S. Tumakha, 2005 .

High-carbon concentrations at the silicon dioxide–silicon carbide interface identified by electron energy loss spectroscopy

Qamar Ul Wahab, Q. Wahab, L. Porter, 2000 .

High Voltage (>2.5kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall CVD and High-Temperature CVD Layers

Tsunenobu Kimoto, Qamar Ul Wahab, Anne Henry, 1997 .