Scott Sills

High-density reRAM for storage class memory

Alessandro Calderoni, Nirmal Ramaswamy, Katsuhisa Aratani, 2015, 2015 15th Non-Volatile Memory Technology Symposium (NVMTS).

Challenges for high-density 16Gb ReRAM with 27nm technology

Alessandro Calderoni, Nirmal Ramaswamy, Katsuhisa Aratani, 2015, 2015 Symposium on VLSI Circuits (VLSI Circuits).

Understanding pulsed-cycling variability and endurance in HfOx RRAM

Alessandro Calderoni, Stefano Ambrogio, Simone Balatti, 2015, 2015 IEEE International Reliability Physics Symposium.

Engineering ReRAM for high-density applications

Alessandro Calderoni, Nirmal Ramaswamy, Scott Sills, 2015 .

Voltage-Controlled Cycling Endurance of HfOx-Based Resistive-Switching Memory

Alessandro Calderoni, Stefano Ambrogio, Simone Balatti, 2015, IEEE Transactions on Electron Devices.

A copper ReRAM cell for Storage Class Memory applications

Alessandro Calderoni, Nirmal Ramaswamy, Katsuhisa Aratani, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory

Alessandro Calderoni, Stefano Ambrogio, Simone Balatti, 2016, IEEE Transactions on Electron Devices.

Controlling nanowear in a polymer by confining segmental relaxation.

Bernd Gotsmann, Jane Frommer, Craig J Hawker, 2006, Nano letters.