Hisao Shigematsu

E-Band 85-mW Oscillator and 1.3-W Amplifier ICs Using 0.12µm GaN HEMTs for Millimeter-Wave Transceivers

Satoshi Masuda, Yasuhiro Nakasha, Naoki Hara, 2010, 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

Over 200-W high isolation GaN-switch for L-band radar module

Takao Fujii, Akihiko Akasegawa, Hirotaka Hayashi, 2011, 2011 8th European Radar Conference.

PIN/Preamp receiver modules for 40-Gb/s optical communication systems

Achyut K. Dutta, Tsuneo Tokumitsu, Keiji Sato, 2002, SPIE ITCom.

Recent progress of GaN electronic devices for wireless communication system

K. Joshin, Naoki Hara, Toshihide Kikkawa, 2008, SPIE OPTO.

GaN MMIC amplifiers for W-band transceivers

Naoki Hara, Toshihide Kikkawa, Kenji Imanishi, 2009, 2009 European Microwave Integrated Circuits Conference (EuMIC).

SiC Backside Via-hole Process For GaN HEMT MMICs Using High Etch Rate ICP Etching

Y. Inoue, Naoki Hara, Toshihide Kikkawa, 2009 .

Reliability of GaN HEMTs: current status and future technology

Naoki Hara, Toshihide Kikkawa, Kenji Imanishi, 2009, 2009 IEEE International Reliability Physics Symposium.