Donald R. Young

发表

Surface Effects on Silicon: Introduction

Donald R. Young, Donald P. Seraphim, 1964, IBM J. Res. Dev..

Space-Charge Model for Surface Potential Shifts in Silicon Passivated with Thin Insulating Layers

Donald R. Young, Jacob Earl Thomas, 1964, IBM J. Res. Dev..

Charge transport and trapping phenomena in off‐stoichiometric silicon dioxide films

Donald R. Young, Thomas N. Theis, C. Falcony, 1983 .

Electron trapping in electron‐beam irradiated SiO2

Donald R. Young, J. M. Aitken, J. Aitken, 1978 .

Reduction of electron and hole trapping in SiO2 by rapid thermal annealing

Donald R. Young, Stephan A. Cohen, Vaughn R. Deline, 1984 .

Exciton or hydrogen diffusion in SiO2

Donald R. Young, Gary W. Rubloff, G. Rubloff, 1979 .

Hydrogen migration under avalanche injection of electrons in Si metal‐oxide‐semiconductor capacitors

Donald R. Young, C. W. Magee, R. Gale, 1983 .

Electron current injected into SiO2 from p‐type Si depletion regions

Donald R. Young, 1976 .

Reduction of electron trapping in silicon dioxide by high‐temperature nitrogen anneal

Donald R. Young, S. Lai, F. J. Feigl, 1981 .

The effects of water on oxide and interface trapped charge generation in thermal SiO2 films

Donald R. Young, D. Dimaria, S. Lai, 1981 .

Electron trapping by radiation‐induced charge in MOS devices

Donald R. Young, J. M. Aitken, J. Aitken, 1976 .