T. Abe

A 34 MB/s MLC Write Throughput 16 Gb NAND With All Bit Line Architecture on 56 nm Technology

Yan Li, Khanh Nguyen, Long Pham, 2009, IEEE Journal of Solid-State Circuits.

A 146-mm/sup 2/ 8-gb multi-level NAND flash memory with 70-nm CMOS technology

T.D. Pham, M. Kojima, M. Higashitani, 2006, IEEE Journal of Solid-State Circuits.