Thomas Grabolla

A 0.13µm SiGe BiCMOS technology featuring fT/fmax of 240/330 GHz and gate delays below 3 ps

Yuji Yamamoto, Bernd Heinemann, Steffen Marschmeyer, 2010, 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

Monolithically integrated 25Gbit/sec receiver for 1.55µm in photonic BiCMOS technology

Steffen Marschmeyer, Stefan Lischke, Lars Zimmermann, 2014, OFC.

Low frequency MOS-CV technique for selfconsistent determination of dark currents in high resistivity substrates

Peter Schley, Roland Sorge, Thomas Grabolla, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

Monolithically integrated 25Gbit/sec receiver for 1.55µm in photonic BiCMOS technology

Andreas Beling, Bernd Heinemann, Steffen Marschmeyer, 2014, OFC 2014.

SiGe p-n-p HBTs With 265-GHz f max, 175-GHz f T, and 3.65-ps Gate Delay

Yuji Yamamoto, Bernd Heinemann, Steffen Marschmeyer, 2014, IEEE Electron Device Letters.