Tomohiko Shibata

发表

Analysis of Design Process for Engineering Plastic Parts with Developed Consistent Business Process Model

Tetsuo Fuchino, Tomohiko Shibata, T. Shibata, 2017 .

Si‐doped GaN/AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths

Francois H. Julien, Maria Tchernycheva, Eva Monroy, 2006 .

Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE

Takashi Jimbo, Masayoshi Umeno, Osamu Oda, 2002 .

Structure of GaN quantum dots grown under “modified Stranski–Krastanow” conditions on AlN

Eva Monroy, Tomohiko Shibata, N. Gogneau, 2003 .

Broadband terahertz time-domain spectroscopy : crystalline and glassy drug materials

Seiji Kojima, Tomohiko Shibata, Tatsuya Mori, 2014 .

Si-doped GaN∕AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths

Francois H. Julien, Maria Tchernycheva, Eva Monroy, 2006 .

Metalorganic Vapor Phase Epitaxy Growth and Study of Stress in AlGaN Using Epitaxial AlN as Underlying Layer

Yoshihiro Kida, Hideto Miyake, Kazumasa Hiramatsu, 2003 .

AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Grown on Epitaxial AlN/Sapphire Templates

Makoto Miyoshi, Takashi Egawa, Tomohiko Shibata, 2008 .

n‐type conductivity control of AlGaN with high Al mole fraction

Hideto Miyake, Kazumasa Hiramatsu, Tomohiko Shibata, 2006 .

High-electron-mobility AlGaN∕AlN∕GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy

Osamu Oda, Keiichiro Asai, Hiroyasu Ishikawa, 2004 .