Hisayoshi Itoh

发表

The irradiation facilities for the radiation tolerance testing of semiconductor devices for space use in Japan

Kazuo Arakawa, Takeshi Ohshima, Sumio Matsuda, 1999, 1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463).

Evaluation of single-event upset tolerance on recent commercial memory ICS

Isamu Nashiyama, Sumio Matsuda, Hisayoshi Itoh, 1997 .

High Energy Radiation Degradation of High Speed Diodes for Space Applications

H. Mori, Toshio Hirao, Hisayoshi Itoh, 2002 .

Electrical Characteristics of Interface Defects in Oxides Grown at 1200℃ in Dry Oxygen Ambient on Silicon Carbide and Their

Tetsuo Takahashi, Hajime Okumura, Hidekazu Tsuchida, 2003 .

Extracting area of interest for image understanding based on visual information

Kenzo Itoh, Hisayoshi Itoh, Yuka Miyashita, 2008 .

Investigation of single-event charge collection from angled ion strikes

Tsuyoshi Okamoto, Tomihiro Kamiya, Shinobu Onoda, 2001 .

Positron annihilation study of vacancy-type defects in silicon carbide co-implanted with aluminum and carbon ions

Takeshi Ohshima, Koji Abe, Masahito Yoshikawa, 2001 .

Impact of lattice defects on the performance degradation of Si photodiodes by high-temperature gamma and electron irradiation

Eddy Simoen, Hidenori Ohyama, Shinobu Onoda, 2001 .

Temperature dependence of heavy ion-induced current transients in Si epilayer devices

Shinobu Onoda, Hisayoshi Itoh, Toshio Hirao, 2002 .

Analysis of single-ion multiple-bit upset in high-density DRAMs

Sumio Matsuda, A. B. Campbell, N. Nemoto, 2000 .

Improvement of hydrogen absorption rate of Pd by ion irradiation

Hirohisa Uchida, Hiroshi Abe, Hisayoshi Itoh, 2003 .

Positron Annihilation Studies of Defects in Ion Implanted Palladium

A. Kaniava, Hisayoshi Itoh, Akira Uedono, 2001 .

Characterization of charge generated in silicon carbide n + p diodes using transient ion beam-induced current

Akimasa Kinoshita, I. Nakano, Takeshi Yamakawa, 2005 .

Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy withS=32andC3vsymmetry inn-type4H−SiC

Norio Morishita, Satoshi Yamasaki, Takeshi Ohshima, 2002 .

Band gap narrowing of titanium dioxide by sulfur doping

Keisuke Asai, Hisayoshi Itoh, K. Asai, 2002 .

High-injection carrier dynamics generated by MeV heavy ions impacting high-speed photodetectors

Shinobu Onoda, Hisayoshi Itoh, Toshio Hirao, 2005 .

Electron-positron momentum distributions associated with isolated silicon vacancies in 3C-SiC

T. Higuchi, Masahito Yoshikawa, Hisayoshi Itoh, 2005 .

Effect of gamma-ray irradiation on the characteristics of 6H silicon carbide metal-oxide-semiconductor field effect transistor with hydrogen-annealed gate oxide

Takeshi Ohshima, Masahito Yoshikawa, Hisayoshi Itoh, 2001 .

Identification of divacancies in 4H-SiC

Björn Magnusson, Takeshi Ohshima, Adam Gali, 2006 .

Spectral response of a gamma and electron irradiated pin photodiode

Shinobu Onoda, Hisayoshi Itoh, Toshio Hirao, 2002 .

Proton radiation analysis of multi-junction space solar cells

Sumio Matsuda, Takeshi Ohshima, Hisayoshi Itoh, 2003 .