A. N. Lepore

Self-Aligned-Gate Digital AlGaAs/GaAs Modulation-Doped Field Effect Transistor (MODFET) Processing And Short Channel Effects

Lester F. Eastman, Paul J. Tasker, William J. Schaff, 1987, Other Conferences.

Adaptability of a catalog spacecraft bus to diverse science missions

Koji Nii, Donatello Conte, A. N. Lepore, 2003, 2003 IEEE Aerospace Conference Proceedings (Cat. No.03TH8652).

Charge control, DC, and RF performance of a 0.35- mu m pseudomorphic AlGaAs/InGaAs modulation-doped field-effect transistor

Paul J. Tasker, William J. Schaff, L. D. Nguyen, 1988 .

Characterization of sidewall roughness of InP/InGaAsP etched using inductively coupled plasma for low loss optical waveguide applications

Joseph H. Abeles, Jae-Hyung Jang, Ilesanmi Adesida, 2003 .

Effect of H2 on the etch profile of InP/InGaAsP alloys in Cl2/Ar/H2 inductively coupled plasma reactive ion etching chemistries for photonic device fabrication

Joseph H. Abeles, Jae-Hyung Jang, Ilesanmi Adesida, 2002 .

0.1 μm gate length MODFETs with unity current gain cutoff frequency above 110 GHz

R. C. Tiberio, E. D. Wolf, Lester F. Eastman, 1988 .

Direct measurement of nanoscale sidewall roughness of optical waveguides using an atomic force microscope

Joseph H. Abeles, Jae-Hyung Jang, Ilesanmi Adesida, 2003 .