Robert Joseph Therrien

发表

150 W GaN-on-Si RF power transistor

J. D. Brown, S. Singhal, Edwin L. Piner, 2005, IMS 2005.

Gan-on-Silicon Based Technology for RF Cellular and Wimax Infrastructure Applications

Isik C. Kizilyalli, Robert Joseph Therrien, A. W. Hanson, 2006, 2006 64th Device Research Conference.

Field-Plated 0.25-μm Gate-Length AlGaN/GaN HEMTs With Varying Field-Plate Length

Andrei Vescan, John C. Roberts, S. Singhal, 2006 .

Electrical detection of deoxyribonucleic acid hybridization with AlGaN/GaN high electron mobility transistors

J. J. Chen, John C. Roberts, Stephen J. Pearton, 2006 .

Material, process, and device development of GaN-based HFETs on silicon substrates

Andrei Vescan, John C. Roberts, S. Singhal, 2004 .

Qualification and Reliability of a GaN Process Platform

S. Singhal, Robert Joseph Therrien, Pradeep Rajagopal, 2007 .

AlGaN/GaN HFETs on 100 mm Silicon Substrates for Commercial Wireless Applications

Andrei Vescan, John C. Roberts, S. Singhal, 2003 .

Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane

John C. Roberts, Stephen J. Pearton, Brent P. Gila, 2005 .

AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon ( 1 1 1 ) substrates

Andrei Vescan, S. Singhal, J. D. Brown, 2002 .

Pressure-induced changes in the conductivity of AlGaN∕GaN high-electron mobility-transistor membranes

John C. Roberts, Stephen J. Pearton, Brent P. Gila, 2004 .