F. S. Johnson

发表

Low-thermal-budget MOS gate stack formation using a cluster tool rapid-thermal-processing module

John R. Hauser, Amr M. Bayoumi, J. S. Montgomery, 1994, Other Conferences.

Manufacturability issues in rapid thermal chemical vapor deposition

Mehmet C. Öztürk, F. Y. Sorrell, D. T. Grider, 1991 .

Competitive and cost effective high-k based 28nm CMOS technology for low power applications

J. Bonnouvrier, R. Augur, F. Arnaud, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Selective Removal of Silicon-Germanium: Chemical and Reactive Ion Etching

F. S. Johnson, J. Wortman, V. Misra, 1993 .

Characterization of LPCVD of Silicon Nitride in a Rapid Thermal Processor

F. S. Johnson, J. Wortman, Roderick M. Miller, 1989 .

LPCVD of silicon dioxide by pyrolysis of TEOS in a rapid thermal processor

D. T. Grider, F. S. Johnson, J. Wortman, 1989 .

pn-junction delineation in Si devices using scanning capacitance spectroscopy

Vladimir A. Ukraintsev, Hal Edwards, S. Ashburn, 2000 .

Selective chemical etching of polycrystalline SiGe alloys with respect to Si and SiO2

D. T. Grider, F. S. Johnson, Donald S. Miles, 1992 .

Novel High-Performance Analog Devices for Advanced Low-Power High-k Metal Gate Complementary Metal–Oxide–Semiconductor Technology

F. S. Johnson, R. Wachnik, K. Barla, 2011 .

Low-Pressure Chemical Vapor Deposition of Polycrystalline Silicon and Silicon Dioxide By Rapid Thermal Processing

D. T. Grider, F. S. Johnson, J. Wortman, 1989 .

Self-aligned BJTs for VLSI using a new diffusion technique for shallow base formation

F. S. Johnson, J. Wortman, M. C. Öztürk, 1993 .