Ian T. Ferguson

发表

Investigation of the spectral properties of LED-based MR16s for general illumination

David Fitzhugh Brown, David Nicol, Adam M. Payne, 2004, SPIE Optics + Photonics.

High brightness GaN light emitting diodes with different barrier widths in quantum wells for general lighting application

Gang Li, Ian T. Ferguson, I-Hsiang Hung, 2010, Optical Engineering + Applications.

Time-resolved photoluminescence measurements of InGaN light-emitting diodes, films, and multiple quantum wells

Milan Pophristic, Ian T. Ferguson, F. H. Long, 1999, Photonics West.

Nuclear science and optical studies of InAlGaP materials grown on GaAs by metalorganic chemical vapor deposition

Lin Li, Ian T. Ferguson, Zhe Chuan Feng, 2012, Other Conferences.

Enhancement of light extraction of GaN light-emitting diode using opals layer

Bin Zhang, Zhiping Zhou, Ian T. Ferguson, 2007, SPIE Optical Engineering + Applications.

MOCVD growth of GaN on Si substrates using an ALD-grown Al2O3 interlayer

Ian T. Ferguson, Nola Li, William E. Fenwick, 2009, Optical Engineering + Applications.

A review of earth abundant ZnO-based materials for thermoelectric and photovoltaic applications

Yang Wang, Ian T. Ferguson, Amirhossein Ghods, 2018, OPTO.

Is ZnO as a universal semiconductor material an oxymoron?

Ian T. Ferguson, Babar Hussain, Benjamin Klein, 2014, Photonics West - Optoelectronic Materials and Devices.

Optical properties and material studies of InGaN/GaN multi-quantum well light emitting diode wafers with different structures

Ian T. Ferguson, Zhe Chuan Feng, Tzu-Ching Lin, 2009, Optical Engineering + Applications.

Comparison of methods for measurement of HP-LEDs based on the junction temperature (Conference Presentation)

Ian T. Ferguson, Yuqin Zong, Noe V. Medina, 2017 .

Minimizing shadow losses in III-nitride solar cells

Ian T. Ferguson, Muhammad Jamil, Christiana Honsberg, 2009, Optics + Photonics for Sustainable Energy.

Auto-adaptive statistical signal processing systems for magnetic sensors

Ian T. Ferguson, Matt Kane, 2006 .

Third International Conference on Solid State Lighting

Nadarajah Narendran, Ian T. Ferguson, Steven P. DenBaars, 2004 .

Molecular beam epitaxial growth of InSb p-i-n photodetectors on GaAs and Si

Manijeh Razeghi, Ian T. Ferguson, Steven Boyd Slivken, 1995, Photonics West.

Room temperature GaN-based spin polarized emitters

Ian T. Ferguson, Na Lu, Bahadir Kucukgok, 2013, Photonics West - Optoelectronic Materials and Devices.

Errata: Solid State Lighting

Ian T. Ferguson, John C. Carrano, 2005 .

Sb-based infrared materials and photodetectors for the 3-5 and 8-12 μm range

Manijeh Razeghi, Ian T. Ferguson, E. Michel, 1996, Photonics West.

What would Edison do with solid state lighting?

Ian T. Ferguson, Andrew Melton, Tianming Xu, 2010, Optical Engineering + Applications.

Nanoscale InGaN/GaN on ZnO substrate for LED applications

Ian T. Ferguson, I-Hsiang Hung, Zhe Chuan Feng, 2009, Optical Engineering + Applications.

Dual band HEIWIP detectors with nitride materials

Ian T. Ferguson, Andrew Bezinger, Gamini Ariyawansa, 2007, SPIE Optical Engineering + Applications.

Thermal design considerations in the packaging of GaN based light emitting diodes

Samuel Graham, David Nicol, Ian T. Ferguson, 2005, SPIE Optics + Photonics.

Development of new substrate technologies for GaN LEDs: atomic layer deposition transition layers on silicon and ZnO

Toby Xu, Ian T. Ferguson, Nola Li, 2009, OPTO.

Development of a circadian light source

David Nicol, Ian T. Ferguson, 2002, SPIE Optics + Photonics.

Optical and structural properties of dual wavelength InGaN/GaN multiple quantum well light emitting diodes

Ian T. Ferguson, Zhe Chuan Feng, Weijie Lu, 2008, Optical Engineering + Applications.

ZnO semiconductors for lighting

Adam M. Payne, Ian T. Ferguson, Ming Pan, 2005, SPIE Optics + Photonics.

MOCVD growth and characterization of 100-mm diameter (Ga1-xAlx)0.5In0.5P/GaAs epitaxial materials for LED applications

Ian T. Ferguson, Zhe Chuan Feng, Eric A. Armour, 1998, Photonics West.

High quantum efficiency AlxGa1-xN/GaN-based ultraviolet p-i-n photodetectors with a recessed window structure

Ian T. Ferguson, Joe C. Campbell, A. L. Beck, 2000, Photonics West - Optoelectronic Materials and Devices.

AlGaN/GaN ultraviolet photodetectors

Ian T. Ferguson, Joe C. Campbell, A. L. Beck, 2000, SPIE Optics + Photonics.

Numerical simulation of semiconductor optical amplifiers based wavelength converters

Ian T. Ferguson, Kevin F. Brennan, Dong-Xue Wang, 2005, SPIE Optics East.

Free-standing GaN-based LEDs with ALD-Al2O3/Si substrate removed by wet etching

Sheng Liu, Ian T. Ferguson, Tahir Zaidi, 2010, Optical Engineering + Applications.

MOVPE growth of AlGaN/GaN superlattices on ZnO substrates for green emitter applications

Ian T. Ferguson, Nola Li, Benjamin Klein, 2008, Optical Engineering + Applications.

A Review of the Physiological Aspects of Solid State Lighting

Ian T. Ferguson, Amirhossein Ghods, Chuanle Zhou, 2017 .

Disorder in InGaN light-emitting diodes

Milan Pophristic, Ian T. Ferguson, F. H. Long, 2000, Photonics West - Optoelectronic Materials and Devices.

Effect of V/III molar ratio on the structural and optical properties of InN epilayers grown by HPCVD

A. G. Unil Perera, Ian T. Ferguson, M. K. I. Senevirathna, 2012, Other Conferences.

High-performance GaN/AlGaN-based ultraviolet photodetectors

Hongen Shen, Michael Wraback, Ian T. Ferguson, 2000, Photonics West - Optoelectronic Materials and Devices.

Measurement of carrier transport and dynamics in wide bandgap semiconductors using femtosecond pump-probe techniques

Hongen Shen, Michael Wraback, Ian T. Ferguson, 2001, SPIE OPTO.

Al fraction induced effects on the capacitance characteristics of n+-GaN/AlxGa1-xN IR detectors

A. Bezinger, Ian T. Ferguson, Nikolaus Dietz, 2009, Optical Engineering + Applications.

Material properties of MOCVD-grown AlGaN layers influenced by indium-incorporation

Lin Li, Ian T. Ferguson, Zhe Chuan Feng, 2011, Optical Engineering + Applications.

Optical design and simulation for nanoscale Distributed Bragg Reflector (DBR) for high-brightness LED

David Nicol, Ian T. Ferguson, Dong-Xue Wang, 2006, SPIE Optics + Photonics.

Metalorganic chemical vapor deposition of GaN and InGaN on ZnO substrate using Al2O3 as a transition layer

Ian T. Ferguson, Zhe Chuan Feng, Nola Li, 2008, Optical Engineering + Applications.

Characterization of InN layers grown by high-pressure chemical vapor deposition

Ian T. Ferguson, A. G. U. Perera, William E. Fenwick, 2006 .

Magnetic properties of bulk Zn1-xMnxO and Zn1-xCoxO single crystals

Ian T. Ferguson, Christopher J. Summers, Jeff Nause, 2004 .

Optical properties of n-doped Ga1−xMnxN epitaxial layers grown by metal-organic chemical-vapor deposition in mid and far (5−50 μm) IR range

Martin Strassburg, Ian T. Ferguson, A. G. U. Perera, 2008 .

RAMAN MICROSCOPY OF LATERAL EPITAXIAL OVERGROWTH OF GAN ON SAPPHIRE

Ian T. Ferguson, F. H. Long, M. Pophristic, 1999 .

Time-resolved electroabsorption measurement of the electron velocity-field characteristic in GaN

Hongen Shen, Michael Wraback, Ian T. Ferguson, 2000 .

Zinc oxide as an active n-layer and antireflection coating for silicon based heterojunction solar cell

Ian T. Ferguson, Babar Hussain, Abasifreke Ebong, 2015 .

Investigation of the light emission properties and carrier dynamics in dual-wavelength InGaN/GaN multiple-quantum well light emitting diodes

Lei Liu, Ian T. Ferguson, Zhe Chuan Feng, 2012 .

GaN/AlGaN ultraviolet/infrared dual-band detector

A. Bezinger, Martin Strassburg, Ian T. Ferguson, 2006 .

The Fermi level dependence of the optical and magnetic properties of Ga1−xMnxN grown by metal–organic chemical vapour deposition

Martin Strassburg, Ian T. Ferguson, Ali Asghar, 2006 .

EFFECT OF PHASE SEPARATION ON PERFORMANCE OF III-V NITRIDE SOLAR CELLS

Ian T. Ferguson, Christiana Honsberg, Hongbo Yu, 2007 .

MOVPE growth of transition-metal-doped GaN and ZnO for spintronic applications

Ian T. Ferguson, William E. Fenwick, Tahir Zaidi, 2008 .

Negative capacitance in GaN/AlGaN heterojunction dual-band detectors

A. Bezinger, Ian T. Ferguson, Steven George Matsik, 2009 .

Efficiency droop in InGaN/GaN multiple-quantum-well blue light-emitting diodes grown on free-standing GaN substrate

Zhiqiang Liu, Guohong Wang, Yi Shi, 2011 .

Investigation of the spectral properties of LED-based MR16 bulbs for general illumination

David Nicol, Ian T. Ferguson, David Fitzhugh Brown, 2005 .

Lattice vibrations in hexagonal Ga1−xMnxN epitaxial films on c-plane sapphire substrates by infrared reflectance spectra

Martin Strassburg, Ian T. Ferguson, A. G. U. Perera, 2006 .

GaN and AlGaN metal–semiconductor–metal photodetectors

Yicheng Lu, Ian T. Ferguson, Zhe Chuan Feng, 1997 .

Analysis of external quantum efficiencies of GaN homojunction p-i-n ultraviolet photodetectors

Ting Li, Ian T. Ferguson, John C. Carrano, 1999 .

Single-crystal aluminum nitride nanomechanical resonators

Milan Pophristic, Ian T. Ferguson, Andrew Cleland, 2001 .

AlGaN p-i-n Photodiode Arrays for Solar-Blind Applications

R. Singh, Ian T. Ferguson, Marion B. Reine, 2000 .

The effect of silicon doping in the selected barrier on the electroluminescence of InGaN∕GaN multiquantum well light emitting diode

Tae-Kyung Yoo, Ian T. Ferguson, Eun-Hyun Park, 2007 .

Composition dependence of the infrared dielectric functions in Si-doped hexagonal Al x Ga 1 − x N films on c -plane sapphire substrates

Martin Strassburg, Ian T. Ferguson, A. G. U. Perera, 2005 .

Raman scattering study on anisotropic property of wurtzite GaN

Ian T. Ferguson, Zhe Chuan Feng, Zexiang Shen, 2009 .

Design and characterization of GaN∕InGaN solar cells

Ian T. Ferguson, Sarah Kurtz, Christiana Honsberg, 2007 .

Comparative study of Mn and Fe incorporation into GaN by metalorganic chemical vapor deposition

Martin Strassburg, Ian T. Ferguson, Nola Li, 2007 .

Correlation of the structural and ferromagnetic properties of Ga1−xMnxN grown by metalorganic chemical vapor deposition

Martin Strassburg, Adam M. Payne, Ian T. Ferguson, 2006 .

High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates

Manijeh Razeghi, Adam W. Saxler, Patrick Kung, 1995 .

Metal-organic chemical vapor deposition of ZnO

Nada El-Zein, Martin Strassburg, Ian T. Ferguson, 2006 .

Photoluminescence and Raman Scattering Characterization of GaN, InGaN and AlGaN Films Using a UV Excitation Raman-Photoluminescence Microscope

G. D. Pitt, Ian T. Ferguson, Zhe Chuan Feng, 1997 .

Broadband spectrally dynamic solid state illumination source

Martin Strassburg, David Nicol, Ian T. Ferguson, 2006 .

Epitaxial Growth and Characterization of p-Type ZnO

Ian T. Ferguson, Jeff Nause, Eun-Hyun Park, 2007 .

Capacitance hysteresis in GaN/AlGaN heterostructures

A. Bezinger, Ian T. Ferguson, Steven George Matsik, 2009 .

Solid State Lighting and Displays

Nadarajah Narendran, Ian T. Ferguson, Steven P. Denbaars, 2001 .

AlGaN UV focal plane arrays

Milan Pophristic, Ian T. Ferguson, Russell D. Dupuis, 2001 .

Growth of High Al Concentration AlGaN for Solar Blind Photodetector Applications

Milan Pophristic, Ian T. Ferguson, Marion B. Reine, 2001 .

Spatial characterization of doped SiC wafers by Raman spectroscopy

Milan Pophristic, Ian T. Ferguson, Zhe Chuan Feng, 1998 .

GaN∕AlGaN heterojunction infrared detector responding in 8–14 and 20–70μm ranges

Martin Strassburg, Ian T. Ferguson, Ali Asghar, 2006 .