Andrei Vescan

发表

Comparison of MOCVD and MBE Regrowth for CAVET Fabrication

Simon Kotzea, Wiebke Witte, Birte-Julia Godejohann, 2019, Electronics.

WS2 monolayer based light emitting devices fabricated by scalable deposition techniques

Michael Heuken, Holger Kalisch, Andrei Vescan, 2020, OPTO.

Small signal and power performance of AlGaN/GaN HFETs grown on s.i.SiC

Andrei Vescan, Joan M. Redwing, H. Sledzik, 2000 .

High-Responsivity Flexible Photodetectors based on MOVPE-MoS2

Michael Heuken, Andrei Vescan, Max C. Lemme, 2019, 2019 Device Research Conference (DRC).

Industrial Aspects of 2D Nanomaterials

Michael Heuken, Holger Kalisch, Andrei Vescan, 2018 .

Investigation of organic semiconductor interlayers in hybrid PEDOT:PSS/silicon solar cells

Andrei Vescan, Holger Kalisch, Martin Weingarten, 2016 .

Pentacene/K12 solar cells formed by organic vapor phase deposition

Michael Heuken, Andrei Vescan, Paul Meredith, 2014 .

Extraction of the active acceptor concentration in (pseudo-) vertical GaN MOSFETs using the body-bias effect

Simon Kotzea, Holger Kalisch, Andrei Vescan, 2019, Microelectron. J..

Optimization of hybrid organic/inorganic poly(3-hexylthiophene-2,5-diyl)/silicon solar cells

Andrei Vescan, Holger Kalisch, Martin Weingarten, 2016 .

RF Characterisation and Transient Behaviour of AlGaN/GaN Power HFETs

Andrei Vescan, H. Sledzik, Helmut Leier, 2001 .

Demonstration of a GaN-Based Vertical-Channel JFET Fabricated by Selective-Area Regrowth

Simon Kotzea, Michael Heuken, Holger Kalisch, 2018, IEEE Transactions on Electron Devices.

MBE grown AlGaN/GaN MODFETs with high breakdown voltage

Andrei Vescan, Andrew M. Wowchak, Peter P. Chow, 1999 .

Simulation of AlGaN/GaN-HFETs including spontaneous and piezoelectric polarization charges

Andrei Vescan, Helmut Leier, W. Klix, 1999 .

δ-Doping in diamond

Andrei Vescan, E. Kohn, A. Bergmaier, 1999 .

Influence of barrier thickness on AlInN/AlN/GaN heterostructures and device properties

Michael Heuken, Holger Kalisch, Andrei Vescan, 2009 .

Electrical characterisation of diamond resistors etched by RIE

Andrei Vescan, E. Kohn, W. Ebert, 1996 .

H_2S-free Metal-Organic Vapor Phase Epitaxy of Coalesced 2D WS_2 Layers on Sapphire

Michael Heuken, Andrei Vescan, H. Kalisch, 2019, MRS Advances.

Field-Plated 0.25-μm Gate-Length AlGaN/GaN HEMTs With Varying Field-Plate Length

Andrei Vescan, John C. Roberts, S. Singhal, 2006 .

Electrical properties of quasi-vertical Schottky diodes

Wiebke Witte, Michael Heuken, Holger Kalisch, 2012 .

Material, process, and device development of GaN-based HFETs on silicon substrates

Andrei Vescan, John C. Roberts, S. Singhal, 2004 .

Dielectric function and optical properties of quaternary AlInGaN alloys

Michael Heuken, Holger Kalisch, Andrei Vescan, 2011 .

First Small-Signal Data of GaN-Based p-Channel Heterostructure Field Effect Transistors

Holger Kalisch, Andrei Vescan, Herwig Hahn, 2013 .

Power handling limits and degradation of large area AlGaN/GaN RF-HEMTs

Andrei Vescan, Helmut Leier, W. Klix, 2003 .

characteristics of epitaxial Schottky Au barrier diode on p+ diamond substrate

Andrei Vescan, E. Kohn, W. Ebert, 1995 .

Building blocks of vertical GaN-based devices

Wiebke Witte, Andrei Vescan, Joachim Knoch, 2016 .

Gallium Nitride on Silicon HEMTs for Wireless Infrastructure Applications, Thermal Design and Performance

Andrei Vescan, S. Singhal, J. D. Brown, 2002 .

Effect of Carbon Doping Level on Static and Dynamic Properties of AlGaN/GaN Heterostructures Grown on Silicon

Michael Heuken, Holger Kalisch, Andrei Vescan, 2018, IEEE Transactions on Electron Devices.

Growth and Characterization of Vertical and Lateral p‐n Junctions Formed by Selective‐Area p‐GaN MOVPE on Patterned Templates

Simon Kotzea, Michael Heuken, Holger Kalisch, 2018, physica status solidi (a).

Recessed-Gate Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistors on Si with Record DC Performance

Holger Kalisch, Andrei Vescan, Herwig Hahn, 2011 .

The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices

Michael Heuken, Holger Kalisch, Andrei Vescan, 2014 .

Insulating behavior of interfaces in regrown Al0.23Ga0.77N/GaN double heterostructures on Al0.07Ga0.93N back‐barrier templates

Michael Heuken, Holger Kalisch, Andrei Vescan, 2013 .

AlGaN/AlN-GaN-SL HEMTs with Multiple 2DEG Channels

Holger Kalisch, Andrei Vescan, Arne Debald, 2014, Journal of Electronic Materials.

AlGaN/GaN HFETs on 100 mm Silicon Substrates for Commercial Wireless Applications

Andrei Vescan, John C. Roberts, S. Singhal, 2003 .

p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers

Michael Heuken, Holger Kalisch, Andrei Vescan, 2013, IEEE Transactions on Electron Devices.

Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal–polar GaN/AlInGaN interfaces

Michael Heuken, Holger Kalisch, Andrei Vescan, 2014 .

Scalable Large-Area p–i–n Light-Emitting Diodes Based on WS2 Monolayers Grown via MOCVD

Michael Heuken, Holger Kalisch, Andrei Vescan, 2019, ACS Photonics.

In situ SiN passivation of AlInN/GaN heterostructures by MOVPE

Michael Heuken, Holger Kalisch, Andrei Vescan, 2010 .

AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon ( 1 1 1 ) substrates

Andrei Vescan, S. Singhal, J. D. Brown, 2002 .

Electrothermal characterization of large-area organic light-emitting diodes employing finite-element simulation

Michael Heuken, Holger Kalisch, Andrei Vescan, 2011 .