Martin Gollhofer

Resistance-capacitance limitation of fast double heterojunction Ge p-i-n photodetectors

Jörg Schulze, Erich Kasper, Mathias Kaschel, 2013, Microtechnologies for the New Millennium.

Franz-Keldysh effect of Ge-on-Si pin diodes at common chip temperatures

Jörg Schulze, M. Schmid, Michael Oehme, 2013, Microtechnologies for the New Millennium.

Franz-Keldysh effect in GeSn pin photodetectors

Jörg Schulze, Michael Oehme, Martin Gollhofer, 2014 .

Electrically pumped lasing from Ge Fabry-Perot resonators on Si.

Erich Kasper, Marc Schmid, Michael Oehme, 2015, Optics express.

GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz.

Jörg Schulze, Erich Kasper, Marc Schmid, 2014, Optics express.

Franz-Keldysh Effect in GeSn Detectors

Erich Kasper, Marc Schmid, Michael Oehme, 2014 .

GeSn Heterojunction LEDs on Si Substrates

Gregor Mussler, Dan Buca, Martin Kittler, 2014, IEEE Photonics Technology Letters.

GeSn p-i-n detectors integrated on Si with up to 4% Sn

Jörg Schulze, Michael Oehme, Martin Gollhofer, 2012 .

Electroluminescence of GeSn/Ge MQW LEDs on Si substrate.

Jörg Schulze, Martin Kittler, Bernhard Schwartz, 2015, Optics letters.