T. M. Barton

发表

Dependence of Maximum Gate-Drain in GaAs MESFET's Upon Localized Charge

P. H. Ladbrooke, T. M. Barton, P. Ladbrooke, 1985 .

Effects of various longwall chain pillar configurations on gate road stability

Joseph C. Zelanko, Jeffrey M. Listak, T. M. Barton, 1988 .

Field evaluation of three longwall pillar systems in a Kentucky coal mine. Report of Investigations/1989

T. M. Barton, Christopher Mark, 1989 .

Room-and-pillar mining in bump-prone conditions and thin pillar mining as a bump mitigation technique. Report of Investigations/1993

T. P. Mucho, C. S. Compton, T. M. Barton, 1993 .

Narrow pulse measurement of drain characteristics of GaAs MESFETs

P. H. Ladbrooke, Christopher M. Snowden, T. M. Barton, 1987 .

Two-dimensional numerical simulation of trapping phenomena in the substrate of GaAs MESFET's

Christopher M. Snowden, T. M. Barton, 1990 .

The role of the device surface in the high voltage behaviour of the GaAs MESFET

P. H. Ladbrooke, T. M. Barton, P. Ladbrooke, 1986 .

Avalanche breakdown and surface deep-level trap effects in GaAs MESFET's

R. E. Miles, T. M. Barton, C.-L. Li, 1993 .

Dependence of maximum gate-drain potential in GaAs MESFET's upon localized surface charge

T. M. Barton, P. Ladbrooke, P.H. Ladbrooke, 1985, IEEE Electron Device Letters.