Robert Kudrawiec

发表

Mg2SixSn1-xheterostructures on Si(111) substrate for optoelectronics and thermoelectronics

Jan Misiewicz, Nikolay G. Galkin, Andrei M. Maslov, 2016, Other Conferences.

Characterizations of GaInNAs/GaAs quantum wells

Jarosław Serafińczuk, Marek Tłaczała, Wojciech Dawidowski, 2013, Electron Technology Conference.

Struktura pasmowa i wzmocnienie optyczne studni kwantowych GeSn/Ge

Robert Kudrawiec, H. S. Mączko, Marta Gladysiewicz, 2017 .

Modulation spectroscopy characterization of InAs/GaInAsP/InP quantum dash laser structures

Gilles Patriarche, Krzysztof Ryczko, Francois Lelarge, 2007, SPIE OPTO.

Supercontinuum source as a probing beam in photoreflectance and photoacoustic spectroscopy

Robert Kudrawiec, J. Kopaczek, Szymon J. Zelewski, 2019, Measurement.

The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells

M. Pessa, Mihail Dumitrescu, J. Misiewicz, 2009 .

Mattias Hammar, J. Misiewicz, Robert Kudrawiec, 2015 .

Ground and excited state transitions in as-grown Ga0.64In0.36N0.046As0.954 quantum wells studied by contactless electroreflectance

Fumitaro Ishikawa, Jan Misiewicz, Robert Kudrawiec, 2007 .

The surface boundary conditions in GaN/AlGaN/GaN transistor heterostructures

J. Misiewicz, Marcin Siekacz, Robert Kudrawiec, 2011 .

Photomodulated reflectance and transmittance: optical characterisation of novel semiconductor materials and device structures

J. Misiewicz, P. Sitarek, Robert Kudrawiec, 2004 .

On the deepness of contactless electroreflectance probing in semiconductor structures

J. Misiewicz, Marcin Motyka, Robert Kudrawiec, 2007 .

Contactless electroreflectance of InAs∕In0.53Ga0.23Al0.24As quantum dashes grown on InP substrate: Analysis of the wetting layer transition

Johann Peter Reithmaier, Alfred Forchel, J. Misiewicz, 2007 .

Photoluminescence investigation of porous anodic alumina with spin-on europium-containing titania sol–gel films

J. Misiewicz, N. V. Gaponenko, Leszek Bryja, 2002 .

Doping-Induced Contrast in the Refractive Index for GaInN/GaN Structures at Telecommunication Wavelengths

Witold Rzodkiewicz, Jan Misiewicz, Robert Kudrawiec, 2009 .

Photoreflectance-probed excited states in InAs∕InGaAlAs quantum dashes grown on InP substrate

Johann Peter Reithmaier, Alfred Forchel, Jan Misiewicz, 2006 .

Optically probed wetting layer in InAs/InGaAlAs/InP quantum-dash structures

Johann Peter Reithmaier, Alfred Forchel, Krzysztof Ryczko, 2005 .

Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

Z. R. Wasilewski, Piotr Perlin, Henryk Turski, 2011 .

Contactless electroreflectance of InGaN layers with indium content <=36%: The surface band bending, band gap bowing, and Stokes shift issues

J. Misiewicz, Robert Kudrawiec, M. Siekacz, 2009 .

Photoreflectance evidence of multiple band gaps in dilute GaInNAs layers lattice-matched to GaAs

Janne Konttinen, M. Pessa, Mihail Dumitrescu, 2004 .

MOVPE GaN Grown on Alternative Substrates

Marek Tłaczała, Regina Paszkiewicz, Bogdan Paszkiewicz, 2001 .

Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells

Mattias Hammar, Alfred Forchel, Krzysztof Ryczko, 2004 .

Beyond Quantum Efficiency Limitations Originating from the Piezoelectric Polarization in Light-Emitting Devices

Henryk Turski, Marcin Siekacz, Grzegorz Muziol, 2019, ACS Photonics.

Three beam photoreflectance as a powerful method to investigate semiconductor heterostructures

Tao Wang, Alfred Forchel, Krzysztof Ryczko, 2004 .

Contactless electroreflectance of polar and nonpolar GaN/AlGaN quantum wells

Nicolas Grandjean, J. Misiewicz, Izabella Grzegory, 2011 .

Contactless electroreflectance of GaN0.025As0.975- xSbx/GaAs quantum wells with high Sb content (0.27≤x≤0.33) : The determination of band gap discontinuity

James A. Gupta, J. Misiewicz, Marcin Motyka, 2006 .

Photoreflectance investigation of InAs quantum dashes embedded in In0.53Ga0.47As∕In0.53Ga0.23Al0.24As quantum well grown on InP substrate

Johann Peter Reithmaier, Alfred Forchel, Jan Misiewicz, 2006 .

Temperature evolution of photoluminescence from an In0.22Ga0.78Sb/GaSb single quantum well

Alfred Forchel, J. Misiewicz, Leszek Bryja, 2004 .

Photoluminescence of Eu-doped titania xerogel spin-on deposited on porous anodic alumina

N. V. Gaponenko, Jan Misiewicz, Leszek Bryja, 2002 .

Semiconductor heterostructures and device structures investigated by photoreflectance spectroscopy

Jan Misiewicz, P. Sitarek, Robert Kudrawiec, 2003 .

On the tunnel injection of excitons and free carriers from In0.53Ga0.47As∕In0.53Ga0.23Al0.24As quantum well to InAs∕In0.53Ga0.23Al0.24As quantum dashes

Johann Peter Reithmaier, Alfred Forchel, J. Misiewicz, 2006 .

Room temperature contactless electroreflectance of the ground and excited state transitions in Ga0.76In0.24As0.08Sb0.92∕GaSb single quantum wells of various widths

Alfred Forchel, Jan Misiewicz, Marcin Motyka, 2008 .

Energy difference between electron subbands in AlInN∕GaInN quantum wells studied by contactless electroreflectance spectroscopy

J. Misiewicz, Marcin Siekacz, Marcin Motyka, 2006 .

Luminescence from Sol-Gel-Derived Europium-Doped Films Confined in Mesoporous Anodic Alumina

J. Misiewicz, N. V. Gaponenko, Robert Kudrawiec, 2004 .

Localized and delocalized states in GaNAs studied by microphotoluminescence and photoreflectance

Fumitaro Ishikawa, Achim Trampert, Jan Misiewicz, 2009 .

The energy-fine structure of GaInNAs∕GaAs multiple quantum wells grown at different temperatures and postgrown annealed

Tomi Jouhti, M. Pessa, J. Andrzejewski, 2004 .

Thermal quenching of photoluminescence from InAs/In0.53Ga0.23Al0.24As/InP quantum dashes with different sizes

Johann Peter Reithmaier, Alfred Forchel, J. Misiewicz, 2006 .

Photoluminescence investigation of europium-doped alumina, titania and indium sol–gel-derived films in porous anodic alumina

Sergey V. Gaponenko, J. Misiewicz, N. V. Gaponenko, 2003 .

Terbium photoluminescence in polysiloxane films

E. A. Stepanova, B. Hamilton, J. Misiewicz, 2001 .

Investigations of GaN surface quantum well in AlGaN/GaN transistor heterostructures by contactless electroreflectance spectroscopy

J. Misiewicz, P. K. Larsen, Marcin Motyka, 2006 .

Interband transitions inGaN0.02As0.98−xSbx∕GaAs(0

James S. Harris, Seth R. Bank, Mark A. Wistey, 2006 .