J. Van Steenbergen

Key Issues for the Development of a Ge CMOS Device in an Advanced IC Circuit

Paul Zimmerman, Eddy Simoen, Cedric Huyghebaert, 2006 .

Effect of hafnium germanate formation on the interface of HfO2/germanium metal oxide semiconductor devices

Marc Heyns, Matty Caymax, S. De Gendt, 2006 .

Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

Geert Hellings, Jerome Mitard, Marc Heyns, 2008 .

Physical characterization of HfO 2 deposited on Ge substrates by MOCVD.

Stefan Kubicek, Marc Meuris, Matty Caymax, 2004 .

Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates

Marc Heyns, Marc Meuris, G. Raskin, 2005 .

Deposition of HfO2 on germanium and the impact of surface pretreatments

Stefan Kubicek, T. Chiarella, Matty Caymax, 2004 .

Thin epitaxial si films as a passivation method for Ge(100) : Influence of deposition temperature on ge surface segregation and the high-k/Ge interface quality

Paul Zimmerman, Ben Kaczer, Wilfried Vandervorst, 2006 .