A. Pourghaderi

Key Issues for the Development of a Ge CMOS Device in an Advanced IC Circuit

Paul Zimmerman, Eddy Simoen, Cedric Huyghebaert, 2006 .

In0.53Ga0.47As quantum-well MOSFET with source/drain regrowth for low power logic applications

R. Rooyackers, D. Lin, N. Collaert, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

Suitability of high-k gate oxides for III–V devices: A PBTI study in In0.53Ga0.47As devices with Al2O3

B. Kaczer, D. Lin, N. Waldron, 2014, 2014 IEEE International Reliability Physics Symposium.

An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates

C. Merckling, D. Lin, N. Waldron, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.