Gillis Winderickx

Key Issues for the Development of a Ge CMOS Device in an Advanced IC Circuit

Paul Zimmerman, Eddy Simoen, Cedric Huyghebaert, 2006 .

High Hole Mobility in 65 nm Strained Ge p-Channel Field Effect Transistors with HfO2Gate Dielectric

Jerome Mitard, Jacopo Franco, Luigi Pantisano, 2011 .

Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

Geert Hellings, Jerome Mitard, Marc Heyns, 2008 .

Heavy ion implantation in Ge: Dramatic radiation induced morphology in Ge

Cedric Huyghebaert, Wilfried Vandervorst, Marc Meuris, 2006 .

Observation and Suppression of Nickel Germanide Overgrowth on Germanium Substrates with Patterned SiO2 Structures

Marc Meuris, David P. Brunco, Karl Opsomer, 2008 .

Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates

Marc Heyns, Marc Meuris, G. Raskin, 2005 .