Benny Van Daele

Key Issues for the Development of a Ge CMOS Device in an Advanced IC Circuit

Paul Zimmerman, Eddy Simoen, Cedric Huyghebaert, 2006 .

High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AlN interlayers.

Dominique Schreurs, Kang-Hoon Choi, Gustaaf Borghs, 2003 .