D.M. Kim

A 1.0 V 256 Mb SDRAM with offset-compensated direct sensing and charge-recycled precharge schemes

S.H. Lee, J.H. Choi, C. Kim, 2003, 2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC..

Electrical characteristics of distribution polymer lightning arresters subjected to a water immersion test

J.Y. Kim, D.M. Kim, I.K. Song, 2004, Proceedings of the 2004 IEEE International Conference on Solid Dielectrics, 2004. ICSD 2004..

Automated quantification of retinal nerve fiber layer atrophy in fundus photograph

K.S. Park, S.Y. Lee, J.M. Seo, 2004, The 26th Annual International Conference of the IEEE Engineering in Medicine and Biology Society.

A simple and efficient self-limiting erase scheme for high performance split-gate flash memory cells

D.M. Kim, B.J. Ahn, J.H. Sone, 1998, IEEE Electron Device Letters.

Characterization of Near-Interface Oxide Trap Density in Nitrided Oxides for Nanoscale MOSFET Applications

Chang-Ki Baek, Hee-Hwan Ji, In-Shik Han, 2009, IEEE Transactions on Nanotechnology.

Unified characterization of two-region gate bias stress in submicrometer p-channel MOSFETs

D.M. Kim, B. Sabi, Y. Tang, 1990, IEEE Electron Device Letters.

Simultaneous hot-hole injection at drain and source for efficient erase and excellent endurance in SONOS flash EEPROM cells

D.M. Kim, Myung Kwan Cho, 2003, IEEE Electron Device Letters.

Reliable extraction of cycling induced interface states implementing realistic P/E stresses in reference cell: comparison with flash memory cell

Hong Shick Min, Wookhyun Kwon, Chang-Ki Baek, 2006, IEEE Electron Device Letters.

Characteristics of the Series Resistance Extracted From Si Nanowire FETs Using the $Y$ -Function Technique

Yoon-Ha Jeong, Chang-Ki Baek, Rock-Hyun Baek, 2010, IEEE Transactions on Nanotechnology.

Edge Profile Effect of Tunnel Oxide on Erase Threshold-Voltage Distributions in Flash Memory Cells

Chang-Ki Baek, Bomsoo Kim, Kinam Kim, 2006, IEEE Transactions on Electron Devices.

A new measurement technique for capacitive coupling coefficients and 3-D capacitance characteristics in floating-gate devices

D.M. Kim, I.H. Choi, W.L. Choi, 1994, International Electron Devices and Materials Symposium.