A.K. Sinha

Fabrication demonstration of 1-1.5µ NMOS circuits using optical tri-level processing technology

E.L. Hu, K.J. Orlowsky, D.V. Speeney, 1983, 1983 International Electron Devices Meeting.

Refractory Silicides of Titanium and Tantalum for Low-Resistivity Gates and Interconnects

A.K. Sinha, S. Murarka, H. Levinstein, 1980, IEEE Journal of Solid-State Circuits.

Speed limitations due to interconnect time constants in VLSI integrated circuits

A.K. Sinha, J. Cooper, H. Levinstein, 1982, IEEE Electron Device Letters.