Maojun Wang

发表

Development of Distributed On-line Monitoring System for Dielectric Loss Tangent of High Voltage Capacitive Apparatus

Yadong Liu, Xiuchen Jiang, Gehao Sheng, 2013 .

Impact of Silicon Substrate with Low Resistivity on Vertical Leakage Current in AlGaN/GaN HEMTs

Shan Wu, Yue Xu, Bo Shen, 2019, Applied Sciences.

900 V/1.6 mΩ · cm2 normally off Al 2O3/GaN MOSFET on silicon substrate

Yilong Hao, Wengang Wu, Kevin J. Chen, 2014 .

Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

Shu Yang, Cheng Liu, Kevin J. Chen, 2015 .

Fabrication of High-Uniformity and High-Reliability Si3N4/AlGaN/GaN MIS-HEMTs With Self-Terminating Dielectric Etching Process in a 150-mm Si Foundry

Yilong Hao, Dongmin Chen, Peng Liu, 2018, IEEE Transactions on Electron Devices.

Atomistic modeling of fluorine implantation and diffusion in III-nitride semiconductors

Li Yuan, Maojun Wang, K.J. Chen, 2008, 2008 IEEE International Electron Devices Meeting.

Low ON-Resistance GaN Schottky Barrier Diode With High $V_{\mathrm{ON}}$ Uniformity Using LPCVD Si3N4 Compatible Self-Terminated, Low Damage Anode Recess Technology

Yilong Hao, Yufeng Jin, Cheng P. Wen, 2018, IEEE Electron Device Letters.

Fabrication of Normally Off AlGaN/GaN MOSFET Using a Self-Terminating Gate Recess Etching Technique

Xiaohua Ma, Yang Liu, Min Yu, 2013, IEEE Electron Device Letters.

Self-aligned enhancement-mode AlGaN/GaN HEMTs using 25 keV fluorine ion implantation

Kevin J. Chen, Hongwei Chen, Maojun Wang, 2010, 68th Device Research Conference.

Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With $10^{-13}$ A/mm Leakage Current and $10^{12}$ ON/OFF Current Ratio

Xiaohua Ma, Yue Hao, Min Yu, 2014, IEEE Electron Device Letters.

Kink Effect in AlGaN/GaN HEMTs Induced by Drain and Gate Pumping

Maojun Wang, K. J. Chen, Maojun Wang, 2011, IEEE Electron Device Letters.

Improvement of the Off-State Breakdown Voltage With Fluorine Ion Implantation in AlGaN/GaN HEMTs

Maojun Wang, K. J. Chen, Maojun Wang, 2011, IEEE Transactions on Electron Devices.

Off-State Breakdown Characterization in AlGaN/GaN HEMT Using Drain Injection Technique

Maojun Wang, Maojun Wang, Kevin J Chen, 2010, IEEE Transactions on Electron Devices.

Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask

Xiaohua Ma, Yue Hao, Min Yu, 2014, IEEE Electron Device Letters.

Improved transport properties of the two-dimensional electron gas in AlGaN/GaN heterostructures by AlN surface passivation layer

Maojun Wang, R. Zhang, Youliao Zheng, 2006 .

Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layer

Shu Yang, Cheng Liu, Kevin J. Chen, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

Jie Zhang, Ning Tang, Chenguang He, 2016, Scientific Reports.

Tunneling induced electron transfer in SiNx/AlGaN/GaN based metal–insulator–semiconductor structures

Feng Xu, Z. J. Yang, Maojun Wang, 2007 .

Reduction of Current Collapse in GaN High-Electron Mobility Transistors Using a Repeated Ozone Oxidation and Wet Surface Treatment

Yilong Hao, Min Yu, Wengang Wu, 2015, IEEE Electron Device Letters.

900 V/1.6 Normally Off MOSFET on Silicon Substrate

Yilong Hao, Wengang Wu, Kevin J. Chen, 2014 .

High temperature dependence of the density of two-dimensional electron gas in Al0.18Ga0.82N/GaN heterostructures

Feng Xu, Z. J. Yang, Sen Huang, 2007 .

Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed $I-V$ Measurement

Yilong Hao, Wengang Wu, Dawei Yan, 2014, IEEE Electron Device Letters.

Influences of laser lift-off process on the performances of large-area light-emitting diodes

Hao Fang, Tao Dai, Xiangning Kang, 2007 .

High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

Yilong Hao, Wengang Wu, Kevin J. Chen, 2013, IEEE Electron Device Letters.

Temperature Dependence of the Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors on Si Substrate

Yilong Hao, Wengang Wu, Kevin J. Chen, 2015, IEEE Transactions on Electron Devices.