J. Dangla

Characterization of semiconductor devices using technological and geometric parameters

Wlodzimierz M. Zuberek, A. Konczykowska, J. Dangla, 1992, [1992] Proceedings of the 35th Midwest Symposium on Circuits and Systems.

Hybrid HBT oscillator and mixer

C. Algani, E. Caquot, J. Dangla, 1990 .

Simulation-based parameter extraction, its implementation and some applications

Wlodzimierz M. Zuberek, C. Algani, Agnieszka Konczykowska, 1994 .

Le transistor bipolaire à hétérojonction: un dispositif performant pour les futurs systèmes de télécommunication

P. Launay, J. Dangla, C. Dubon-Chevallier, 1995 .

Accuracy improvements in two-port noise parameter extraction method

J. Dangla, A. Boudiaf, M. LaPorte, 1992, 1992 IEEE Microwave Symposium Digest MTT-S.

Compact ECL gate design for double mesa HBT process

P. Desrousseaux, E. Caquot, J. Dangla, 1990 .

Very high gain in carbon-doped base heterojunction bipolar transistor grown by chemical beam epitaxy

B. Sermage, F. Alexandre, J. Dangla, 1992 .

Excess noise in AlGaAs/GaAs heterojunction bipolar transistors and associated TLM test structures

C. Delseny, S. Jarrix, G. Lecoy, 1994 .

Analysis of the surface base current drift in GaAs HBT's

Y. Danto, Jean-Michel Dumas, N. Labat, 1996 .

Ga0.72Al0.28As/Ga0.99Be0.01As heterojunction bipolar transistor grown by molecular beam epitaxy

D. Ankri, F. Alexandre, J. Dangla, 1986, IEEE Electron Device Letters.

GaInP-GaAs Quasi Self-Aligned HBT Technology

F. Alexandre, R. Driad, J. Dangla, 1994, ESSDERC '94: 24th European Solid State Device Research Conference.